Ultra-Low Voltage Class AB Switched Current Memory Cell

Mucha Igor

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power consumption, as well as good noise performance.
    Original languageEnglish
    Title of host publicationProc. International Conference on Communications, Signals and Systems, vol.2
    Place of PublicationBrno
    PublisherTechnical University of Brno
    Publication date1996
    Pages535-538
    Publication statusPublished - 1996
    EventInternational Conference on Communications, Signals and Systems - Brno, Czech Republic
    Duration: 10 Sep 199612 Sep 1996

    Conference

    ConferenceInternational Conference on Communications, Signals and Systems
    Country/TerritoryCzech Republic
    CityBrno
    Period10/09/199612/09/1996

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