Ultra-Low Power Optical Transistor Using a Single Quantum Dot Embedded in a Photonic Wire

H.A. Nguyen, T. Grange, N.S. Malik, E. Dupuy, D. Tumanov, P.L. de Assis, I. Yeo, F. Fratini, Niels Gregersen, A. Auffeves, J. Claudon, J. P. Poizat

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

Using a single InAs quantum dot embedded in a GaAs photonic wire, we realize a giant non-linearity between two optical modes to experimentally demonstrate an all-optical transistor triggered by 10 photons.
Original languageEnglish
Title of host publicationQuantum Information and Measurement 2017
Number of pages1
PublisherOptical Society of America OSA
Publication date2017
ISBN (Print)978-1-943580-26-2
DOIs
Publication statusPublished - 2017
EventQuantum Information and Measurement 2017 - Paris, France
Duration: 5 Apr 20177 Apr 2017

Conference

ConferenceQuantum Information and Measurement 2017
CountryFrance
CityParis
Period05/04/201707/04/2017

Bibliographical note

From the session: Single Photons Quantum Information (QT2B)

Cite this

Nguyen, H. A., Grange, T., Malik, N. S., Dupuy, E., Tumanov, D., de Assis, P. L., Yeo, I., Fratini, F., Gregersen, N., Auffeves, A., Claudon, J., & Poizat, J. P. (2017). Ultra-Low Power Optical Transistor Using a Single Quantum Dot Embedded in a Photonic Wire. In Quantum Information and Measurement 2017 Optical Society of America OSA. https://doi.org/10.1364/QIM.2017.QT2B.2