Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP

Viktor Krozer; Tom Keinicke Johansen; Torsten Djurhuus; Chenhui Jiang; Jens Vidkjær

doi:10.1109/MIKON.2006.4345336

Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP

Viktor Krozer, Tom Keinicke Johansen, Torsten Djurhuus, Chenhui Jiang, Jens Vidkjær

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

Analog MMIC circuits with ultra-wideband operation are discussed in view of their frequency limitation and different circuit topologies. Results for designed and fabricated frequency converters in SiGe, GaAs, and InP technologies are presented in the paper. RF type circuit topologies exhibit a flat conversion gain with a 3 dB bandwidth of 10 GHz for SiGe and in excess of 20 GHz for GaAs processes. The concurrent LO-IF isolation is better than -25 dB, without including the improvement due to the combiner circuit. The converter circuits exhibit similar instantaneous bandwidth at IF and RF ports of ≫ 7.5 GHz and ≫ 10 GHz for SiGe BiCMOS and GaAs MMIC, respectively. Analysis of the frequency behaviour of frequency converting devices is presented for improved mixer design. Millimeter-wave front-end components for advanced microwave imaging and communications purposes have also been demonstrated. Analysis techniques and novel feedback schemes show improvement to the traditional circuit design. Subharmonic mixer measurements at 50 GHz RF signal agree very well with simulations, which manifests the broadband operating properties of these circuits.

Original language	English
Title of host publication	International Conference on Microwaves, Radar & Wireless Communications, 2006. MIKON 2006.
Publisher	IEEE
Publication date	2006
ISBN (Print)	978-83-906662-8-0
DOIs	https://doi.org/10.1109/MIKON.2006.4345336
Publication status	Published - 2006
Event	International Conference on Microwaves, Radar & Wireless Communications, 2006. - Duration: 1 Jan 2006 → …

Conference

Conference	International Conference on Microwaves, Radar & Wireless Communications, 2006.
Period	01/01/2006 → …

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Copyright: 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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title = "Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP",

abstract = "Analog MMIC circuits with ultra-wideband operation are discussed in view of their frequency limitation and different circuit topologies. Results for designed and fabricated frequency converters in SiGe, GaAs, and InP technologies are presented in the paper. RF type circuit topologies exhibit a flat conversion gain with a 3 dB bandwidth of 10 GHz for SiGe and in excess of 20 GHz for GaAs processes. The concurrent LO-IF isolation is better than -25 dB, without including the improvement due to the combiner circuit. The converter circuits exhibit similar instantaneous bandwidth at IF and RF ports of ≫ 7.5 GHz and ≫ 10 GHz for SiGe BiCMOS and GaAs MMIC, respectively. Analysis of the frequency behaviour of frequency converting devices is presented for improved mixer design. Millimeter-wave front-end components for advanced microwave imaging and communications purposes have also been demonstrated. Analysis techniques and novel feedback schemes show improvement to the traditional circuit design. Subharmonic mixer measurements at 50 GHz RF signal agree very well with simulations, which manifests the broadband operating properties of these circuits.",

author = "Viktor Krozer and Johansen, {Tom Keinicke} and Torsten Djurhuus and Chenhui Jiang and Jens Vidkj{\ae}r",

note = "Copyright: 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; International Conference on Microwaves, Radar & Wireless Communications, 2006., MIKON 2006. ; Conference date: 01-01-2006",

year = "2006",

doi = "10.1109/MIKON.2006.4345336",

language = "English",

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Krozer, V, Johansen, TK, Djurhuus, T, Jiang, C & Vidkjær, J 2006, Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP. in International Conference on Microwaves, Radar & Wireless Communications, 2006. MIKON 2006.. IEEE, International Conference on Microwaves, Radar & Wireless Communications, 2006., 01/01/2006. https://doi.org/10.1109/MIKON.2006.4345336

Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP. / Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten et al.
International Conference on Microwaves, Radar & Wireless Communications, 2006. MIKON 2006.. IEEE, 2006.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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AU - Djurhuus, Torsten

AU - Jiang, Chenhui

AU - Vidkjær, Jens

N1 - Copyright: 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 2006

Y1 - 2006

N2 - Analog MMIC circuits with ultra-wideband operation are discussed in view of their frequency limitation and different circuit topologies. Results for designed and fabricated frequency converters in SiGe, GaAs, and InP technologies are presented in the paper. RF type circuit topologies exhibit a flat conversion gain with a 3 dB bandwidth of 10 GHz for SiGe and in excess of 20 GHz for GaAs processes. The concurrent LO-IF isolation is better than -25 dB, without including the improvement due to the combiner circuit. The converter circuits exhibit similar instantaneous bandwidth at IF and RF ports of ≫ 7.5 GHz and ≫ 10 GHz for SiGe BiCMOS and GaAs MMIC, respectively. Analysis of the frequency behaviour of frequency converting devices is presented for improved mixer design. Millimeter-wave front-end components for advanced microwave imaging and communications purposes have also been demonstrated. Analysis techniques and novel feedback schemes show improvement to the traditional circuit design. Subharmonic mixer measurements at 50 GHz RF signal agree very well with simulations, which manifests the broadband operating properties of these circuits.

AB - Analog MMIC circuits with ultra-wideband operation are discussed in view of their frequency limitation and different circuit topologies. Results for designed and fabricated frequency converters in SiGe, GaAs, and InP technologies are presented in the paper. RF type circuit topologies exhibit a flat conversion gain with a 3 dB bandwidth of 10 GHz for SiGe and in excess of 20 GHz for GaAs processes. The concurrent LO-IF isolation is better than -25 dB, without including the improvement due to the combiner circuit. The converter circuits exhibit similar instantaneous bandwidth at IF and RF ports of ≫ 7.5 GHz and ≫ 10 GHz for SiGe BiCMOS and GaAs MMIC, respectively. Analysis of the frequency behaviour of frequency converting devices is presented for improved mixer design. Millimeter-wave front-end components for advanced microwave imaging and communications purposes have also been demonstrated. Analysis techniques and novel feedback schemes show improvement to the traditional circuit design. Subharmonic mixer measurements at 50 GHz RF signal agree very well with simulations, which manifests the broadband operating properties of these circuits.

U2 - 10.1109/MIKON.2006.4345336

DO - 10.1109/MIKON.2006.4345336

M3 - Article in proceedings

SN - 978-83-906662-8-0

BT - International Conference on Microwaves, Radar & Wireless Communications, 2006. MIKON 2006.

PB - IEEE

T2 - International Conference on Microwaves, Radar & Wireless Communications, 2006.

Y2 - 1 January 2006

ER -

Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP

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