Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP

Viktor Krozer, Tom Keinicke Johansen, Torsten Djurhuus, Chenhui Jiang, Jens Vidkjær

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Abstract

Analog MMIC circuits with ultra-wideband operation are discussed in view of their frequency limitation and different circuit topologies. Results for designed and fabricated frequency converters in SiGe, GaAs, and InP technologies are presented in the paper. RF type circuit topologies exhibit a flat conversion gain with a 3 dB bandwidth of 10 GHz for SiGe and in excess of 20 GHz for GaAs processes. The concurrent LO-IF isolation is better than -25 dB, without including the improvement due to the combiner circuit. The converter circuits exhibit similar instantaneous bandwidth at IF and RF ports of ≫ 7.5 GHz and ≫ 10 GHz for SiGe BiCMOS and GaAs MMIC, respectively. Analysis of the frequency behaviour of frequency converting devices is presented for improved mixer design. Millimeter-wave front-end components for advanced microwave imaging and communications purposes have also been demonstrated. Analysis techniques and novel feedback schemes show improvement to the traditional circuit design. Subharmonic mixer measurements at 50 GHz RF signal agree very well with simulations, which manifests the broadband operating properties of these circuits.
Original languageEnglish
Title of host publicationInternational Conference on Microwaves, Radar & Wireless Communications, 2006. MIKON 2006.
PublisherIEEE
Publication date2006
ISBN (Print)978-83-906662-8-0
DOIs
Publication statusPublished - 2006
EventInternational Conference on Microwaves, Radar & Wireless Communications, 2006. -
Duration: 1 Jan 2006 → …

Conference

ConferenceInternational Conference on Microwaves, Radar & Wireless Communications, 2006.
Period01/01/2006 → …

Bibliographical note

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