Type-II Quantum Dot Nanowire Structures with Large Oscillator Strengths for Optical Quantum Gating Applications

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

The exciton oscillator strength (OS) in type-II quantum dot (QD) nanowires is calculated by using a fast and efficient method. We propose a new structure in Double-Well QD (DWQD) nanowire that considerably increases OS of type-II QDs which is a key parameter in optical quantum gating in the stimulated Raman adiabatic passage (STIRAP) process [1] for implementing quantum gates.
Original languageEnglish
Title of host publicationProceedings of NUSOD 2017
PublisherIEEE
Publication date2017
Pages7-8
ISBN (Print)978-1-5090-5323-0
Publication statusPublished - 2017
Event17th International Conference on Numerical Simulation of Optoelectronic Devices - Technical University of Denmark, Lyngby, Denmark
Duration: 24 Jul 201728 Jul 2017
Conference number: 17

Conference

Conference17th International Conference on Numerical Simulation of Optoelectronic Devices
Number17
LocationTechnical University of Denmark
CountryDenmark
CityLyngby
Period24/07/201728/07/2017

Cite this

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title = "Type-II Quantum Dot Nanowire Structures with Large Oscillator Strengths for Optical Quantum Gating Applications",
abstract = "The exciton oscillator strength (OS) in type-II quantum dot (QD) nanowires is calculated by using a fast and efficient method. We propose a new structure in Double-Well QD (DWQD) nanowire that considerably increases OS of type-II QDs which is a key parameter in optical quantum gating in the stimulated Raman adiabatic passage (STIRAP) process [1] for implementing quantum gates.",
author = "Masoomeh Taherkhani and Niels Gregersen and Morten Willatzen and Jesper M{\o}rk",
year = "2017",
language = "English",
isbn = "978-1-5090-5323-0",
pages = "7--8",
booktitle = "Proceedings of NUSOD 2017",
publisher = "IEEE",
address = "United States",

}

Taherkhani, M, Gregersen, N, Willatzen, M & Mørk, J 2017, Type-II Quantum Dot Nanowire Structures with Large Oscillator Strengths for Optical Quantum Gating Applications. in Proceedings of NUSOD 2017. IEEE, pp. 7-8, 17th International Conference on Numerical Simulation of Optoelectronic Devices, Lyngby, Denmark, 24/07/2017.

Type-II Quantum Dot Nanowire Structures with Large Oscillator Strengths for Optical Quantum Gating Applications. / Taherkhani, Masoomeh; Gregersen, Niels; Willatzen, Morten; Mørk, Jesper.

Proceedings of NUSOD 2017. IEEE, 2017. p. 7-8.

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

TY - GEN

T1 - Type-II Quantum Dot Nanowire Structures with Large Oscillator Strengths for Optical Quantum Gating Applications

AU - Taherkhani, Masoomeh

AU - Gregersen, Niels

AU - Willatzen, Morten

AU - Mørk, Jesper

PY - 2017

Y1 - 2017

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AB - The exciton oscillator strength (OS) in type-II quantum dot (QD) nanowires is calculated by using a fast and efficient method. We propose a new structure in Double-Well QD (DWQD) nanowire that considerably increases OS of type-II QDs which is a key parameter in optical quantum gating in the stimulated Raman adiabatic passage (STIRAP) process [1] for implementing quantum gates.

M3 - Article in proceedings

SN - 978-1-5090-5323-0

SP - 7

EP - 8

BT - Proceedings of NUSOD 2017

PB - IEEE

ER -