Type-II Quantum Dot Nanowire Structures with Large Oscillator Strengths for Optical Quantum Gating Applications

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

The exciton oscillator strength (OS) in type-II quantum dot (QD) nanowires is calculated by using a fast and efficient method. We propose a new structure in Double-Well QD (DWQD) nanowire that considerably increases OS of type-II QDs which is a key parameter in optical quantum gating in the stimulated Raman adiabatic passage (STIRAP) process [1] for implementing quantum gates.
Original languageEnglish
Title of host publicationProceedings of NUSOD 2017
PublisherIEEE
Publication date2017
Pages7-8
ISBN (Print)978-1-5090-5323-0
Publication statusPublished - 2017
Event17th International Conference on Numerical Simulation of Optoelectronic Devices - Technical University of Denmark, Lyngby, Denmark
Duration: 24 Jul 201728 Jul 2017
Conference number: 17

Conference

Conference17th International Conference on Numerical Simulation of Optoelectronic Devices
Number17
LocationTechnical University of Denmark
CountryDenmark
CityLyngby
Period24/07/201728/07/2017

Cite this