Type-II quantum-dot-in-nanowire structures with large oscillator strength for optical quantum gate applications

Masoomeh Taherkhani, Morten Willatzen, Jesper Mørk, Niels Gregersen, Dara P. S. McCutcheon

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Abstract

We present a numerical investigation of the exciton energy and oscillator strength in type-II nanowire quantum dots. For a single quantum dot, the poor overlap of the electron part and the weakly confined hole part of the excitonic wave function leads to a low oscillator strength compared to type-I systems. To increase the oscillator strength, we propose a double quantum dot structure featuring a strongly localized exciton wave function and a corresponding fourfold relative enhancement of the oscillator strength, paving the way towards efficient optically controlled quantum gate applications in the type-II nanowire system. The simulations are performed using a computationally efficient configuration-interaction method suitable for handling the relatively large nanowire structures.
Original languageEnglish
Article number125408
JournalPhysical Review B
Volume96
Issue number12
Number of pages9
ISSN2469-9950
DOIs
Publication statusPublished - 2017

Cite this

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title = "Type-II quantum-dot-in-nanowire structures with large oscillator strength for optical quantum gate applications",
abstract = "We present a numerical investigation of the exciton energy and oscillator strength in type-II nanowire quantum dots. For a single quantum dot, the poor overlap of the electron part and the weakly confined hole part of the excitonic wave function leads to a low oscillator strength compared to type-I systems. To increase the oscillator strength, we propose a double quantum dot structure featuring a strongly localized exciton wave function and a corresponding fourfold relative enhancement of the oscillator strength, paving the way towards efficient optically controlled quantum gate applications in the type-II nanowire system. The simulations are performed using a computationally efficient configuration-interaction method suitable for handling the relatively large nanowire structures.",
author = "Masoomeh Taherkhani and Morten Willatzen and Jesper M{\o}rk and Niels Gregersen and McCutcheon, {Dara P. S.}",
year = "2017",
doi = "10.1103/PhysRevB.96.125408",
language = "English",
volume = "96",
journal = "Physical Review B (Condensed Matter and Materials Physics)",
issn = "1098-0121",
publisher = "American Physical Society",
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Type-II quantum-dot-in-nanowire structures with large oscillator strength for optical quantum gate applications. / Taherkhani, Masoomeh; Willatzen, Morten; Mørk, Jesper; Gregersen, Niels; McCutcheon, Dara P. S.

In: Physical Review B, Vol. 96, No. 12, 125408, 2017.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Type-II quantum-dot-in-nanowire structures with large oscillator strength for optical quantum gate applications

AU - Taherkhani, Masoomeh

AU - Willatzen, Morten

AU - Mørk, Jesper

AU - Gregersen, Niels

AU - McCutcheon, Dara P. S.

PY - 2017

Y1 - 2017

N2 - We present a numerical investigation of the exciton energy and oscillator strength in type-II nanowire quantum dots. For a single quantum dot, the poor overlap of the electron part and the weakly confined hole part of the excitonic wave function leads to a low oscillator strength compared to type-I systems. To increase the oscillator strength, we propose a double quantum dot structure featuring a strongly localized exciton wave function and a corresponding fourfold relative enhancement of the oscillator strength, paving the way towards efficient optically controlled quantum gate applications in the type-II nanowire system. The simulations are performed using a computationally efficient configuration-interaction method suitable for handling the relatively large nanowire structures.

AB - We present a numerical investigation of the exciton energy and oscillator strength in type-II nanowire quantum dots. For a single quantum dot, the poor overlap of the electron part and the weakly confined hole part of the excitonic wave function leads to a low oscillator strength compared to type-I systems. To increase the oscillator strength, we propose a double quantum dot structure featuring a strongly localized exciton wave function and a corresponding fourfold relative enhancement of the oscillator strength, paving the way towards efficient optically controlled quantum gate applications in the type-II nanowire system. The simulations are performed using a computationally efficient configuration-interaction method suitable for handling the relatively large nanowire structures.

U2 - 10.1103/PhysRevB.96.125408

DO - 10.1103/PhysRevB.96.125408

M3 - Journal article

VL - 96

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

SN - 1098-0121

IS - 12

M1 - 125408

ER -