@inproceedings{21aed82af4924754b678f526dc814c05,
title = "Two-Photon Absorption based Silicon Photodetector with Topology Optimized cavity",
abstract = "A topologically optimized photonic cavity with an integrated lateral p-i-n structure-based silicon(Si) photodetector has been fabricated. The silicon based cavity allows for the integration of photodetectors (PDs) in CMOS technology, bypassing challenges associated with adding other materials. The goal of the topological optimization is to maximize the rate of two-photon absorption in silicon, while maintaining small dimensions. The fabricated device was characterized, obtaining a resonant wavelength at 1543 nm with a Q-factor of 6315 and a responsivity of 0.21 mA/W while maintaining a low dark current.",
keywords = "Cavity, Photodetector, Silicon, Topology, Two-Photon",
author = "Robin Dahiya and Kamel, {Ayman N.} and Christiansen, {Rasmus E.} and Andrey Marchevsky and Ole Hansen and Kresten Yvind",
note = "Publisher Copyright: {\textcopyright} 2024 SPIE.; SPIE Photonics Europe 2024 ; Conference date: 07-04-2024 Through 12-04-2024",
year = "2024",
doi = "10.1117/12.3022438",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE - International Society for Optical Engineering",
editor = "Andrews, {David L.} and Bain, {Angus J.} and Antonio Ambrosio",
booktitle = "Proceedings os SPIE",
}