Tuning the thermoelectric properties by manipulating copper in Cu2SnSe3 system

Shyam  Prasad K; Ashok  Rao; Benedict Christopher; Ruchi  Bhardwaj; Nagendra Singh  Chauhan; Safdar Abbas Malik; Ngo Van Nong; B. S.  Nagaraja; Riya  Thomas

doi:10.1016/j.jallcom.2018.03.136

Tuning the thermoelectric properties by manipulating copper in Cu₂SnSe₃ system

Shyam Prasad K, Ashok Rao^*, Benedict Christopher, Ruchi Bhardwaj, Nagendra Singh Chauhan, Safdar Abbas Malik, Ngo Van Nong, B. S. Nagaraja, Riya Thomas

^*Corresponding author for this work

Department of Energy Conversion and Storage

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Abstract

Cu_2+xSnSe₃ (0 ≤ x ≤ 0.08) compounds were synthesized by conventional solid-state reaction followed by spark plasma sintering (SPS) technique. Transport properties of the samples were measured as a function of temperature in the temperature range 323–773 K. As compared to Cu₂SnSe₃ sample, the electrical resistivity (ρ) is increased for the sample with x = 0.04, thereafter a decrease is seen with further increase in copper content. Analysis of electrical resistivity indicates that small poloron hoping model is operative in the entire temperature range for all samples. The positive Seebeck coefficient (S) for the samples in the entire temperature range indicates that the majority charge carriers are holes. The highest figure of merit, ZT (= 0.32) was achieved at 773 K for the sample Cu_2.06SnSe₃ which is about 3 times that of Cu₂SnSe₃ sample. Maximum thermoelectric compatibility factor (˜1.28 V⁻¹) was observed at 673 K for the sample Cu_2.08SnSe₃.

Original language	English
Journal	Journal of Alloys and Compounds
Volume	748
Pages (from-to)	273-280
ISSN	0925-8388
DOIs	https://doi.org/10.1016/j.jallcom.2018.03.136
Publication status	Published - 2018

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@article{02594129ee7749a181a9bd769239d869,

title = "Tuning the thermoelectric properties by manipulating copper in Cu2SnSe3 system",

abstract = "Cu2+xSnSe3 (0 ≤ x ≤ 0.08) compounds were synthesized by conventional solid-state reaction followed by spark plasma sintering (SPS) technique. Transport properties of the samples were measured as a function of temperature in the temperature range 323–773 K. As compared to Cu2SnSe3 sample, the electrical resistivity (ρ) is increased for the sample with x = 0.04, thereafter a decrease is seen with further increase in copper content. Analysis of electrical resistivity indicates that small poloron hoping model is operative in the entire temperature range for all samples. The positive Seebeck coefficient (S) for the samples in the entire temperature range indicates that the majority charge carriers are holes. The highest figure of merit, ZT (= 0.32) was achieved at 773 K for the sample Cu2.06SnSe3 which is about 3 times that of Cu2SnSe3 sample. Maximum thermoelectric compatibility factor (˜1.28 V−1) was observed at 673 K for the sample Cu2.08SnSe3.",

author = "{Prasad K}, Shyam and Ashok Rao and Benedict Christopher and Ruchi Bhardwaj and Chauhan, {Nagendra Singh} and Malik, {Safdar Abbas} and {Van Nong}, Ngo and Nagaraja, {B. S.} and Riya Thomas",

year = "2018",

doi = "10.1016/j.jallcom.2018.03.136",

language = "English",

volume = "748",

pages = "273--280",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier",

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TY - JOUR

T1 - Tuning the thermoelectric properties by manipulating copper in Cu2SnSe3 system

AU - Prasad K, Shyam

AU - Rao, Ashok

AU - Christopher, Benedict

AU - Bhardwaj, Ruchi

AU - Chauhan, Nagendra Singh

AU - Malik, Safdar Abbas

AU - Van Nong, Ngo

AU - Nagaraja, B. S.

AU - Thomas, Riya

PY - 2018

Y1 - 2018

N2 - Cu2+xSnSe3 (0 ≤ x ≤ 0.08) compounds were synthesized by conventional solid-state reaction followed by spark plasma sintering (SPS) technique. Transport properties of the samples were measured as a function of temperature in the temperature range 323–773 K. As compared to Cu2SnSe3 sample, the electrical resistivity (ρ) is increased for the sample with x = 0.04, thereafter a decrease is seen with further increase in copper content. Analysis of electrical resistivity indicates that small poloron hoping model is operative in the entire temperature range for all samples. The positive Seebeck coefficient (S) for the samples in the entire temperature range indicates that the majority charge carriers are holes. The highest figure of merit, ZT (= 0.32) was achieved at 773 K for the sample Cu2.06SnSe3 which is about 3 times that of Cu2SnSe3 sample. Maximum thermoelectric compatibility factor (˜1.28 V−1) was observed at 673 K for the sample Cu2.08SnSe3.

AB - Cu2+xSnSe3 (0 ≤ x ≤ 0.08) compounds were synthesized by conventional solid-state reaction followed by spark plasma sintering (SPS) technique. Transport properties of the samples were measured as a function of temperature in the temperature range 323–773 K. As compared to Cu2SnSe3 sample, the electrical resistivity (ρ) is increased for the sample with x = 0.04, thereafter a decrease is seen with further increase in copper content. Analysis of electrical resistivity indicates that small poloron hoping model is operative in the entire temperature range for all samples. The positive Seebeck coefficient (S) for the samples in the entire temperature range indicates that the majority charge carriers are holes. The highest figure of merit, ZT (= 0.32) was achieved at 773 K for the sample Cu2.06SnSe3 which is about 3 times that of Cu2SnSe3 sample. Maximum thermoelectric compatibility factor (˜1.28 V−1) was observed at 673 K for the sample Cu2.08SnSe3.

U2 - 10.1016/j.jallcom.2018.03.136

DO - 10.1016/j.jallcom.2018.03.136

M3 - Journal article

SN - 0925-8388

VL - 748

SP - 273

EP - 280

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -