Tuning the stoichiometry and electrical properties of tantalum oxide thin films

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Abstract

Tantalum oxide has a wide range of applications and has drawn much attention especially for its useful properties in resistive random-access memories, in which the Ta oxide composition plays an important role to control the electrical properties of the TaOx thin films. In this paper, we present a way to tune the composition of TaOx thin films by varying the oxygen partial pressure during growth using pulsed laser deposition. TaOx thin films were deposited at room temperature, under oxygen partial pressures ranging from 10−6 mbar to 2 × 10−2 mbar. Using angle resolved X-ray photoelectron spectroscopy, we show that the composition of the film varies systematically with the oxygen partial pressure during the film growth. We then correlate the oxygen content with the electrical properties of the film and the results show that the composition has a great influence on the resistivity of the TaOx thin films. As the oxygen partial pressure during deposition increases, the percentage of tantalum pentoxide (Ta2O5) as well as the resistivity of the films increases. This experimental approach provides a pathway to control the TaOx thin film stoichiometry and its electrical properties during growth.
Original languageEnglish
JournalApplied Surface Science
Volume470
Pages (from-to)1071-1074
ISSN0169-4332
DOIs
Publication statusPublished - 2019

Cite this

@article{1fce2d41aa7a4a46bd927344b07540a1,
title = "Tuning the stoichiometry and electrical properties of tantalum oxide thin films",
abstract = "Tantalum oxide has a wide range of applications and has drawn much attention especially for its useful properties in resistive random-access memories, in which the Ta oxide composition plays an important role to control the electrical properties of the TaOx thin films. In this paper, we present a way to tune the composition of TaOx thin films by varying the oxygen partial pressure during growth using pulsed laser deposition. TaOx thin films were deposited at room temperature, under oxygen partial pressures ranging from 10−6 mbar to 2 × 10−2 mbar. Using angle resolved X-ray photoelectron spectroscopy, we show that the composition of the film varies systematically with the oxygen partial pressure during the film growth. We then correlate the oxygen content with the electrical properties of the film and the results show that the composition has a great influence on the resistivity of the TaOx thin films. As the oxygen partial pressure during deposition increases, the percentage of tantalum pentoxide (Ta2O5) as well as the resistivity of the films increases. This experimental approach provides a pathway to control the TaOx thin film stoichiometry and its electrical properties during growth.",
author = "Yang Li and Simone Sanna and Kion Norrman and Christensen, {Dennis Valbj{\o}rn} and Pedersen, {Christian S{\o}ndergaard} and {Garc{\'i}a Lastra}, {Juan Maria} and Traulsen, {Marie Lund} and Vincenzo Esposito and Nini Pryds",
year = "2019",
doi = "10.1016/j.apsusc.2018.11.153",
language = "English",
volume = "470",
pages = "1071--1074",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - Tuning the stoichiometry and electrical properties of tantalum oxide thin films

AU - Li, Yang

AU - Sanna, Simone

AU - Norrman, Kion

AU - Christensen, Dennis Valbjørn

AU - Pedersen, Christian Søndergaard

AU - García Lastra, Juan Maria

AU - Traulsen, Marie Lund

AU - Esposito, Vincenzo

AU - Pryds, Nini

PY - 2019

Y1 - 2019

N2 - Tantalum oxide has a wide range of applications and has drawn much attention especially for its useful properties in resistive random-access memories, in which the Ta oxide composition plays an important role to control the electrical properties of the TaOx thin films. In this paper, we present a way to tune the composition of TaOx thin films by varying the oxygen partial pressure during growth using pulsed laser deposition. TaOx thin films were deposited at room temperature, under oxygen partial pressures ranging from 10−6 mbar to 2 × 10−2 mbar. Using angle resolved X-ray photoelectron spectroscopy, we show that the composition of the film varies systematically with the oxygen partial pressure during the film growth. We then correlate the oxygen content with the electrical properties of the film and the results show that the composition has a great influence on the resistivity of the TaOx thin films. As the oxygen partial pressure during deposition increases, the percentage of tantalum pentoxide (Ta2O5) as well as the resistivity of the films increases. This experimental approach provides a pathway to control the TaOx thin film stoichiometry and its electrical properties during growth.

AB - Tantalum oxide has a wide range of applications and has drawn much attention especially for its useful properties in resistive random-access memories, in which the Ta oxide composition plays an important role to control the electrical properties of the TaOx thin films. In this paper, we present a way to tune the composition of TaOx thin films by varying the oxygen partial pressure during growth using pulsed laser deposition. TaOx thin films were deposited at room temperature, under oxygen partial pressures ranging from 10−6 mbar to 2 × 10−2 mbar. Using angle resolved X-ray photoelectron spectroscopy, we show that the composition of the film varies systematically with the oxygen partial pressure during the film growth. We then correlate the oxygen content with the electrical properties of the film and the results show that the composition has a great influence on the resistivity of the TaOx thin films. As the oxygen partial pressure during deposition increases, the percentage of tantalum pentoxide (Ta2O5) as well as the resistivity of the films increases. This experimental approach provides a pathway to control the TaOx thin film stoichiometry and its electrical properties during growth.

U2 - 10.1016/j.apsusc.2018.11.153

DO - 10.1016/j.apsusc.2018.11.153

M3 - Journal article

VL - 470

SP - 1071

EP - 1074

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -