Abstract
| Original language | English |
|---|---|
| Journal | Applied Surface Science |
| Volume | 470 |
| Pages (from-to) | 1071-1074 |
| ISSN | 0169-4332 |
| DOIs | |
| Publication status | Published - 2019 |
Cite this
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Tuning the stoichiometry and electrical properties of tantalum oxide thin films. / Li, Yang; Sanna, Simone; Norrman, Kion; Christensen, Dennis Valbjørn; Pedersen, Christian Søndergaard; García Lastra, Juan Maria; Traulsen, Marie Lund; Esposito, Vincenzo; Pryds, Nini.
In: Applied Surface Science, Vol. 470, 2019, p. 1071-1074.Research output: Contribution to journal › Journal article › Research › peer-review
TY - JOUR
T1 - Tuning the stoichiometry and electrical properties of tantalum oxide thin films
AU - Li, Yang
AU - Sanna, Simone
AU - Norrman, Kion
AU - Christensen, Dennis Valbjørn
AU - Pedersen, Christian Søndergaard
AU - García Lastra, Juan Maria
AU - Traulsen, Marie Lund
AU - Esposito, Vincenzo
AU - Pryds, Nini
PY - 2019
Y1 - 2019
N2 - Tantalum oxide has a wide range of applications and has drawn much attention especially for its useful properties in resistive random-access memories, in which the Ta oxide composition plays an important role to control the electrical properties of the TaOx thin films. In this paper, we present a way to tune the composition of TaOx thin films by varying the oxygen partial pressure during growth using pulsed laser deposition. TaOx thin films were deposited at room temperature, under oxygen partial pressures ranging from 10−6 mbar to 2 × 10−2 mbar. Using angle resolved X-ray photoelectron spectroscopy, we show that the composition of the film varies systematically with the oxygen partial pressure during the film growth. We then correlate the oxygen content with the electrical properties of the film and the results show that the composition has a great influence on the resistivity of the TaOx thin films. As the oxygen partial pressure during deposition increases, the percentage of tantalum pentoxide (Ta2O5) as well as the resistivity of the films increases. This experimental approach provides a pathway to control the TaOx thin film stoichiometry and its electrical properties during growth.
AB - Tantalum oxide has a wide range of applications and has drawn much attention especially for its useful properties in resistive random-access memories, in which the Ta oxide composition plays an important role to control the electrical properties of the TaOx thin films. In this paper, we present a way to tune the composition of TaOx thin films by varying the oxygen partial pressure during growth using pulsed laser deposition. TaOx thin films were deposited at room temperature, under oxygen partial pressures ranging from 10−6 mbar to 2 × 10−2 mbar. Using angle resolved X-ray photoelectron spectroscopy, we show that the composition of the film varies systematically with the oxygen partial pressure during the film growth. We then correlate the oxygen content with the electrical properties of the film and the results show that the composition has a great influence on the resistivity of the TaOx thin films. As the oxygen partial pressure during deposition increases, the percentage of tantalum pentoxide (Ta2O5) as well as the resistivity of the films increases. This experimental approach provides a pathway to control the TaOx thin film stoichiometry and its electrical properties during growth.
U2 - 10.1016/j.apsusc.2018.11.153
DO - 10.1016/j.apsusc.2018.11.153
M3 - Journal article
VL - 470
SP - 1071
EP - 1074
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -