Tuning the resistive switching in tantalum oxide-based memristors by annealing

Yang Li, Y. Eren Suyolcu, Simone Sanna, Dennis Valbjørn Christensen, Marie Lund Traulsen, Eugen Stamate, Christian Søndergaard Pedersen, Peter A. van Aken, Juan Maria García Lastra, Vincenzo Esposito, Nini Pryds*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

47 Downloads (Pure)

Abstract

A key step in engineering resistive switching is the ability to control the device switching behavior. Here, we investigate the possibility to tune the resistive switching of tantalum oxide (TaOx)-based memristors from a non-switchable state to a switchable state by applying post-fabrication annealing of the devices. The switching of the devices was found to be related to: (1) the oxidation state changes in the TaOx thin film after annealing and (2) the local variations in oxygen stoichiometry in the vicinity of the interface between the TiN electrode and the TaOx active resistive layer. We further discuss the possible mechanism behind the resistive switching after annealing. This experimental approach provides a simple but powerful pathway to trigger the resistive switching in devices that do not show any resistive switching initially.
Original languageEnglish
Article number065112
JournalA I P Advances
Volume10
Issue number6
ISSN2158-3226
DOIs
Publication statusPublished - 2020

Cite this