Tuning the ground state of polar LaAlO3/SrTiO3 interface by an electron sink

Yulin Gan; Merlin von Soosten; Yu  Zhang; Wei  Niu; Dennis Valbjørn Christensen; Thomas Sand Jespersen; Nini Pryds; Yunzhong Chen

Tuning the ground state of polar LaAlO₃/SrTiO₃ interface by an electron sink

Yulin Gan, Merlin von Soosten, Yu Zhang, Wei Niu, Dennis Valbjørn Christensen, Thomas Sand Jespersen, Nini Pryds, Yunzhong Chen

Department of Energy Conversion and Storage

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Research › peer-review

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Abstract

Most of the intriguing properties of two-dimensional electron gases (2DEGs) at the LaAlO₃/SrTiO₃ (LAO/STO) interface are sensitive to the electrons located in 3d-orbit of Ti. However, tuning the electronic structure of the system remains challenging due to the intrinsic high carrier density. Herein, instead of using LaMnO₃ (LMO) as buffer layers [1], we show that Mn doping in LaAlO₃ (LAMO) creates an electron sink that alters the ground state of 2DEG by suppressing the carrier density at the interface, without changing the polarity of the system. By precise control of the Mn-doping level, we found that 2DEGs in our system experience a change from two-band to one-band transport with decreasing carrier density, which is accompanied by a Lifshitz transition at a critical carrier density of 2.76×10¹³ cm^-2 at 2K. Significantly, the peak value (255.7mK) of superconducting transition temperature is observed at Lifshitz point. In addition, our experiments realize the coexistence of ferromagnetism (FM) and superconductivity (SC) by Mn doping.

Original language	English
Title of host publication	2017 TO-BE Fall Meeting - Towards oxidebased Electronics
Number of pages	1
Publication date	2017
Pages	72
Publication status	Published - 2017
Event	24th International Workshop on Oxide Electronics - Chicago, United States Duration: 24 Sept 2017 → 27 Sept 2017 Conference number: 24 https://sites.northwestern.edu/woe24/

Conference

Conference	24th International Workshop on Oxide Electronics
Number	24
Country/Territory	United States
City	Chicago
Period	24/09/2017 → 27/09/2017
Internet address	https://sites.northwestern.edu/woe24/

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title = "Tuning the ground state of polar LaAlO3/SrTiO3 interface by an electron sink",

abstract = "Most of the intriguing properties of two-dimensional electron gases (2DEGs) at the LaAlO3/SrTiO3 (LAO/STO) interface are sensitive to the electrons located in 3d-orbit of Ti. However, tuning the electronic structure of the system remains challenging due to the intrinsic high carrier density. Herein, instead of using LaMnO3 (LMO) as buffer layers [1], we show that Mn doping in LaAlO3 (LAMO) creates an electron sink that alters the ground state of 2DEG by suppressing the carrier density at the interface, without changing the polarity of the system. By precise control of the Mn-doping level, we found that 2DEGs in our system experience a change from two-band to one-band transport with decreasing carrier density, which is accompanied by a Lifshitz transition at a critical carrier density of 2.76×1013 cm-2 at 2K. Significantly, the peak value (255.7mK) of superconducting transition temperature is observed at Lifshitz point. In addition, our experiments realize the coexistence of ferromagnetism (FM) and superconductivity (SC) by Mn doping.",

author = "Yulin Gan and {von Soosten}, Merlin and Yu Zhang and Wei Niu and Christensen, {Dennis Valbj{\o}rn} and {Sand Jespersen}, Thomas and Nini Pryds and Yunzhong Chen",

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language = "English",

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TY - ABST

T1 - Tuning the ground state of polar LaAlO3/SrTiO3 interface by an electron sink

AU - Gan, Yulin

AU - von Soosten, Merlin

AU - Zhang, Yu

AU - Niu, Wei

AU - Christensen, Dennis Valbjørn

AU - Sand Jespersen, Thomas

AU - Pryds, Nini

AU - Chen, Yunzhong

N1 - Conference code: 24

PY - 2017

Y1 - 2017

N2 - Most of the intriguing properties of two-dimensional electron gases (2DEGs) at the LaAlO3/SrTiO3 (LAO/STO) interface are sensitive to the electrons located in 3d-orbit of Ti. However, tuning the electronic structure of the system remains challenging due to the intrinsic high carrier density. Herein, instead of using LaMnO3 (LMO) as buffer layers [1], we show that Mn doping in LaAlO3 (LAMO) creates an electron sink that alters the ground state of 2DEG by suppressing the carrier density at the interface, without changing the polarity of the system. By precise control of the Mn-doping level, we found that 2DEGs in our system experience a change from two-band to one-band transport with decreasing carrier density, which is accompanied by a Lifshitz transition at a critical carrier density of 2.76×1013 cm-2 at 2K. Significantly, the peak value (255.7mK) of superconducting transition temperature is observed at Lifshitz point. In addition, our experiments realize the coexistence of ferromagnetism (FM) and superconductivity (SC) by Mn doping.

AB - Most of the intriguing properties of two-dimensional electron gases (2DEGs) at the LaAlO3/SrTiO3 (LAO/STO) interface are sensitive to the electrons located in 3d-orbit of Ti. However, tuning the electronic structure of the system remains challenging due to the intrinsic high carrier density. Herein, instead of using LaMnO3 (LMO) as buffer layers [1], we show that Mn doping in LaAlO3 (LAMO) creates an electron sink that alters the ground state of 2DEG by suppressing the carrier density at the interface, without changing the polarity of the system. By precise control of the Mn-doping level, we found that 2DEGs in our system experience a change from two-band to one-band transport with decreasing carrier density, which is accompanied by a Lifshitz transition at a critical carrier density of 2.76×1013 cm-2 at 2K. Significantly, the peak value (255.7mK) of superconducting transition temperature is observed at Lifshitz point. In addition, our experiments realize the coexistence of ferromagnetism (FM) and superconductivity (SC) by Mn doping.

M3 - Conference abstract in proceedings

SP - 72

BT - 2017 TO-BE Fall Meeting - Towards oxidebased Electronics

T2 - 24th International Workshop on Oxide Electronics

Y2 - 24 September 2017 through 27 September 2017

ER -