Tuning the Ground State of Oxide Interfaces by an Electron Sink

Y. L. Gan; M. von Soosten; Y.  Zhang; D.  Krishnan; Z.  Zhong; W. Niu; D. J. Carrad; K. Norrman; D. V. Christensen; N.  Gauquelin; T. S. Jespersen; B.G. Shen; J. Verbeeck; J. R. Sun; N. Pryds; Y. Z. Chen

Tuning the Ground State of Oxide Interfaces by an Electron Sink

Y. L. Gan, M. von Soosten, Y. Zhang, D. Krishnan, Z. Zhong, W. Niu, D. J. Carrad, K. Norrman, D. V. Christensen, N. Gauquelin, T. S. Jespersen, B.G. Shen, J. Verbeeck, J. R. Sun, N. Pryds, Y. Z. Chen

Department of Energy Conversion and Storage

Research output: Contribution to conference › Conference abstract for conference › Research › peer-review

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Original language	English
Publication date	2018
Number of pages	1
Publication status	Published - 2018
Event	25th International Workshop on Oxide Electronics (2018) - the Congress-Center at Les Diablerets, Les Diablerets, Switzerland Duration: 1 Oct 2018 → 3 Oct 2018 http://www.unige.ch/iwoe25/

Workshop

Workshop	25th International Workshop on Oxide Electronics (2018)
Location	the Congress-Center at Les Diablerets
Country/Territory	Switzerland
City	Les Diablerets
Period	01/10/2018 → 03/10/2018
Internet address	http://www.unige.ch/iwoe25/

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Gan, Y. L., von Soosten, M., Zhang, Y., Krishnan, D., Zhong, Z., Niu, W., Carrad, D. J., Norrman, K., Christensen, D. V., Gauquelin, N., Jespersen, T. S., Shen, B. G., Verbeeck, J., Sun, J. R., Pryds, N., & Chen, Y. Z. (2018). Tuning the Ground State of Oxide Interfaces by an Electron Sink. Abstract from 25th International Workshop on Oxide Electronics (2018), Les Diablerets, Switzerland.

Gan, Y. L. ; von Soosten, M. ; Zhang, Y. ; Krishnan, D. ; Zhong, Z. ; Niu, W. ; Carrad, D. J. ; Norrman, K. ; Christensen, D. V. ; Gauquelin, N. ; Jespersen, T. S. ; Shen, B.G. ; Verbeeck, J. ; Sun, J. R. ; Pryds, N. ; Chen, Y. Z. / Tuning the Ground State of Oxide Interfaces by an Electron Sink. Abstract from 25th International Workshop on Oxide Electronics (2018), Les Diablerets, Switzerland.1 p.

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title = "Tuning the Ground State of Oxide Interfaces by an Electron Sink",

author = "Gan, {Y. L.} and {von Soosten}, M. and Y. Zhang and D. Krishnan and Z. Zhong and W. Niu and Carrad, {D. J.} and K. Norrman and Christensen, {D. V.} and N. Gauquelin and Jespersen, {T. S.} and B.G. Shen and J. Verbeeck and Sun, {J. R.} and N. Pryds and Chen, {Y. Z.}",

year = "2018",

language = "English",

note = "25th International Workshop on Oxide Electronics (2018) ; Conference date: 01-10-2018 Through 03-10-2018",

url = "http://www.unige.ch/iwoe25/",

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Gan, YL, von Soosten, M, Zhang, Y, Krishnan, D, Zhong, Z, Niu, W, Carrad, DJ, Norrman, K, Christensen, DV, Gauquelin, N, Jespersen, TS, Shen, BG, Verbeeck, J, Sun, JR, Pryds, N & Chen, YZ 2018, 'Tuning the Ground State of Oxide Interfaces by an Electron Sink', 25th International Workshop on Oxide Electronics (2018), Les Diablerets, Switzerland, 01/10/2018 - 03/10/2018.

Tuning the Ground State of Oxide Interfaces by an Electron Sink. / Gan, Y. L.; von Soosten, M.; Zhang, Y. ; Krishnan, D. ; Zhong, Z. ; Niu, W.; Carrad, D. J.; Norrman, K.; Christensen, D. V.; Gauquelin, N. ; Jespersen, T. S.; Shen, B.G.; Verbeeck, J.; Sun, J. R.; Pryds, N.; Chen, Y. Z.

2018. Abstract from 25th International Workshop on Oxide Electronics (2018), Les Diablerets, Switzerland.

Research output: Contribution to conference › Conference abstract for conference › Research › peer-review

TY - ABST

T1 - Tuning the Ground State of Oxide Interfaces by an Electron Sink

AU - Gan, Y. L.

AU - von Soosten, M.

AU - Zhang, Y.

AU - Krishnan, D.

AU - Zhong, Z.

AU - Niu, W.

AU - Carrad, D. J.

AU - Norrman, K.

AU - Christensen, D. V.

AU - Gauquelin, N.

AU - Jespersen, T. S.

AU - Shen, B.G.

AU - Verbeeck, J.

AU - Sun, J. R.

AU - Pryds, N.

AU - Chen, Y. Z.

PY - 2018

Y1 - 2018

M3 - Conference abstract for conference

T2 - 25th International Workshop on Oxide Electronics (2018)

Y2 - 1 October 2018 through 3 October 2018

ER -