Tunable mode-locked semiconductor laser with Bragg mirror external cavity

Kresten Yvind; T. Jørgensen; Dan Birkedal; P. M. W. Skovgaard; J. Hanberg

Tunable mode-locked semiconductor laser with Bragg mirror external cavity

Kresten Yvind, T. Jørgensen, Dan Birkedal, P. M. W. Skovgaard, J. Hanberg

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Abstract

We present a simplified design for a wavelength tunable external cavity mode-locked laser by employing a wedged GaAs/AlGaAs Bragg mirror. The device emits 4-6 ps pulses at 10 GHz and is tunable over 15 nm. Although, in the present configuration, tunability is limited to 15 nm, however, we have shown the potential of a tuning range above 100 nm in a single mechanical stable device.

Original language	English
Title of host publication	2002 IEEE/LEOS Annual Meeting Conference Proceedings
Volume	2
Publisher	IEEE
Publication date	2002
Pages	789-790
ISBN (Print)	07-80-37500-9
Publication status	Published - 2002
Event	15th Annual Meeting of the IEEE Lasers and Electro-Optics Society 2002 - Glasgow, United Kingdom Duration: 10 Nov 2002 → 14 Nov 2002 Conference number: 15

Conference

Conference	15th Annual Meeting of the IEEE Lasers and Electro-Optics Society 2002
Number	15
Country/Territory	United Kingdom
City	Glasgow
Period	10/11/2002 → 14/11/2002

Bibliographical note

Copyright: 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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@inproceedings{8696e7ae36a74a4ab9be895cc61d5b34,

title = "Tunable mode-locked semiconductor laser with Bragg mirror external cavity",

abstract = "We present a simplified design for a wavelength tunable external cavity mode-locked laser by employing a wedged GaAs/AlGaAs Bragg mirror. The device emits 4-6 ps pulses at 10 GHz and is tunable over 15 nm. Although, in the present configuration, tunability is limited to 15 nm, however, we have shown the potential of a tuning range above 100 nm in a single mechanical stable device.",

author = "Kresten Yvind and T. J{\o}rgensen and Dan Birkedal and Skovgaard, {P. M. W.} and J. Hanberg",

note = "Copyright: 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society 2002, LEOS 2002 ; Conference date: 10-11-2002 Through 14-11-2002",

year = "2002",

language = "English",

isbn = "07-80-37500-9",

volume = "2",

pages = "789--790",

booktitle = "2002 IEEE/LEOS Annual Meeting Conference Proceedings",

publisher = "IEEE",

address = "United States",

}

TY - GEN

T1 - Tunable mode-locked semiconductor laser with Bragg mirror external cavity

AU - Yvind, Kresten

AU - Jørgensen, T.

AU - Birkedal, Dan

AU - Skovgaard, P. M. W.

AU - Hanberg, J.

N1 - Conference code: 15

PY - 2002

Y1 - 2002

N2 - We present a simplified design for a wavelength tunable external cavity mode-locked laser by employing a wedged GaAs/AlGaAs Bragg mirror. The device emits 4-6 ps pulses at 10 GHz and is tunable over 15 nm. Although, in the present configuration, tunability is limited to 15 nm, however, we have shown the potential of a tuning range above 100 nm in a single mechanical stable device.

AB - We present a simplified design for a wavelength tunable external cavity mode-locked laser by employing a wedged GaAs/AlGaAs Bragg mirror. The device emits 4-6 ps pulses at 10 GHz and is tunable over 15 nm. Although, in the present configuration, tunability is limited to 15 nm, however, we have shown the potential of a tuning range above 100 nm in a single mechanical stable device.

M3 - Article in proceedings

SN - 07-80-37500-9

VL - 2

SP - 789

EP - 790

BT - 2002 IEEE/LEOS Annual Meeting Conference Proceedings

PB - IEEE

T2 - 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society 2002

Y2 - 10 November 2002 through 14 November 2002

ER -

Tunable mode-locked semiconductor laser with Bragg mirror external cavity

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