Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

Mingjun Chi, G. Erbert, B. Sumpf, Paul Michael Petersen

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than 0.07 nm throughout the tuning range, and the beam quality factor M2 is 2.0 with the output power of 1.27 W.
    Original languageEnglish
    JournalOptics Letters
    Volume35
    Issue number10
    Pages (from-to)1545-1547
    ISSN0146-9592
    DOIs
    Publication statusPublished - 2010

    Keywords

    • tapered diode laser
    • external cavity

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