Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

Mingjun Chi, G. Erbert, B. Sumpf, Paul Michael Petersen

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than 0.07 nm throughout the tuning range, and the beam quality factor M2 is 2.0 with the output power of 1.27 W.
Original languageEnglish
JournalOptics Letters
Volume35
Issue number10
Pages (from-to)1545-1547
ISSN0146-9592
DOIs
Publication statusPublished - 2010

Keywords

  • tapered diode laser
  • external cavity

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