Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier at 670 nm

Mingjun Chi; Ole Bjarlin Jensen; G. Erbert; B. Sumpf; Paul Michael Petersen

doi:10.1109/CLEOPR.2009.5292354

Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier at 670 nm

Ferdinand-Braun-Institut

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

A narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. 800 mW output power is obtained, and the laser system is tunable from 655 to 679 nm.

Original language	English
Title of host publication	Conference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics : CLEO/PACIFIC RIM '09.
Publisher	IEEE
Publication date	2009
Pages	1-2
ISBN (Print)	978-1-4244-3830-3
DOIs	https://doi.org/10.1109/CLEOPR.2009.5292354
Publication status	Published - 2009
Event	8th Pacific Rim Conference on Lasers and Electro-Optics 2009 - Shanghai, China Duration: 30 Aug 2009 → 3 Sept 2009 Conference number: 8 https://ieeexplore.ieee.org/xpl/conhome/5238710/proceeding

Conference

Conference	8th Pacific Rim Conference on Lasers and Electro-Optics 2009
Number	8
Country/Territory	China
City	Shanghai
Period	30/08/2009 → 03/09/2009
Internet address	https://ieeexplore.ieee.org/xpl/conhome/5238710/proceeding

Bibliographical note

Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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title = "Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier at 670 nm",

abstract = "A narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. 800 mW output power is obtained, and the laser system is tunable from 655 to 679 nm.",

author = "Mingjun Chi and Jensen, \{Ole Bjarlin\} and G. Erbert and B. Sumpf and Petersen, \{Paul Michael\}",

note = "Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; 8th Pacific Rim Conference on Lasers and Electro-Optics 2009<br/>, CLEO/Pacific Rim 2009 ; Conference date: 30-08-2009 Through 03-09-2009",

year = "2009",

doi = "10.1109/CLEOPR.2009.5292354",

language = "English",

isbn = "978-1-4244-3830-3",

pages = "1--2",

booktitle = "Conference on Lasers \& Electro Optics \& The Pacific Rim Conference on Lasers and Electro-Optics",

publisher = "IEEE",

address = "United States",

url = "https://ieeexplore.ieee.org/xpl/conhome/5238710/proceeding",

}

Chi, M , Jensen, OB, Erbert, G, Sumpf, B & Petersen, PM 2009, Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier at 670 nm. in Conference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics: CLEO/PACIFIC RIM '09.. IEEE, pp. 1-2, 8th Pacific Rim Conference on Lasers and Electro-Optics 2009
, Shanghai, China, 30/08/2009. https://doi.org/10.1109/CLEOPR.2009.5292354

Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier at 670 nm. / Chi, Mingjun ; Jensen, Ole Bjarlin; Erbert, G. et al.
Conference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics: CLEO/PACIFIC RIM '09.. IEEE, 2009. p. 1-2.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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AU - Sumpf, B.

AU - Petersen, Paul Michael

N1 - Conference code: 8

PY - 2009

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N2 - A narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. 800 mW output power is obtained, and the laser system is tunable from 655 to 679 nm.

AB - A narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. 800 mW output power is obtained, and the laser system is tunable from 655 to 679 nm.

U2 - 10.1109/CLEOPR.2009.5292354

DO - 10.1109/CLEOPR.2009.5292354

M3 - Article in proceedings

SN - 978-1-4244-3830-3

SP - 1

EP - 2

BT - Conference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics

PB - IEEE

T2 - 8th Pacific Rim Conference on Lasers and Electro-Optics 2009<br/>

Y2 - 30 August 2009 through 3 September 2009

ER -

Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier at 670 nm

Abstract

Conference

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