Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier at 670 nm

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    Abstract

    A narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. 800 mW output power is obtained, and the laser system is tunable from 655 to 679 nm.
    Original languageEnglish
    Title of host publicationConference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics : CLEO/PACIFIC RIM '09.
    PublisherIEEE
    Publication date2009
    Pages1-2
    ISBN (Print)978-1-4244-3830-3
    DOIs
    Publication statusPublished - 2009
    Event8th Pacific Rim Conference on Lasers and Electro-Optics 2009
    - Shanghai, China
    Duration: 30 Aug 20093 Sept 2009
    Conference number: 8
    https://ieeexplore.ieee.org/xpl/conhome/5238710/proceeding

    Conference

    Conference8th Pacific Rim Conference on Lasers and Electro-Optics 2009
    Number8
    Country/TerritoryChina
    CityShanghai
    Period30/08/200903/09/2009
    Internet address

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