Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier at 670 nm

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Abstract

A narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. 800 mW output power is obtained, and the laser system is tunable from 655 to 679 nm.
Original languageEnglish
Title of host publicationConference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics : CLEO/PACIFIC RIM '09.
PublisherIEEE
Publication date2009
Pages1-2
ISBN (Print)978-1-4244-3830-3
DOIs
Publication statusPublished - 2009
EventIEEE CLEO/Pacific Rim 2009 - Shanghai, China
Duration: 1 Jan 2009 → …

Conference

ConferenceIEEE CLEO/Pacific Rim 2009
CityShanghai, China
Period01/01/2009 → …

Bibliographical note

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Cite this

Chi, M., Jensen, O. B., Erbert, G., Sumpf, B., & Petersen, P. M. (2009). Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier at 670 nm. In Conference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics: CLEO/PACIFIC RIM '09. (pp. 1-2). IEEE. https://doi.org/10.1109/CLEOPR.2009.5292354