Tunable electrons in oxides and hot phonons in silicon: Insights from theory

Engineering

• Oxygen Vacancy 100%
• Fouriers Law 100%
• Phase Rotation 100%
• Microscale 66%
• Boltzmann Equation 66%
• Photoemission 66%
• Diffusive 33%
• Electronic State 33%
• Cell Area 33%
• Numerical Approach 33%
• Compressive Strain 33%
• Structure Calculation 33%
• Electrical Conductance 33%
• Si System 33%
• Effective Thermal Conductivity 33%
• Brillouin Zone 33%
• Temperature Rise 33%
• Rate Model 33%
• Phonon Dispersion 33%
• Energy Engineering 33%
• Scattering Cross Section 33%
• Fingerprint Data 33%
• Study Materials 33%
• Nodal Line 33%
• Green Function 33%
• Room Temperature 33%
• Nonequilibrium 33%
• Tensile Strain 33%
• Computational Cost 33%
• Magnetic Moment 33%
• Mean Free Path 33%

Material Science

• Density 100%
• Silicon 100%
• Oxide Compound 100%
• Oxygen Vacancy 75%
• Angle-Resolved Photoemission Spectroscopy 50%
• Electronic Structure Calculation 25%
• Thermal Conductivity 25%
• Tensile Strain 25%
• Electronic Structure 25%
• Optical Property 25%
• Thermal Property 25%
• Computational Materials Science 25%
• Spin Polarization 25%

Keyphrases

• Fouriers Law 75%
• Octahedral Rotation 50%
• Data Fingerprint 25%
• Dirac Nodal Line 25%
• Transport Cross Section 25%
• Anharmonic Scattering 25%
• Ferromagnetic Spin 25%