Abstract
Low-noise and tunable single-photon sources are essential components of photonic quantum technologies. However, in WSe2 quantum emitters, charge noise from fluctuations in their local electrostatic environment remains a major obstacle to achieving transform-limited single-photon emission and high photon indistinguishability. Here, we systematically investigate two noise mitigation strategies in hexagonal boron nitride (h-BN): encapsulation and electrostatic biasing. We demonstrate that h-BN encapsulation alone suppresses spectral wandering (from '-170 mu eV to '-40 mu eV) and narrows emission linewidths (from '-524 mu eV to '-120 mu eV), while applied bias enables stable Stark tuning over a 280 mu eV range and further linewidth narrowing down to '-100 mu eV, reaching the resolution-limited regime. Timeresolved and second-order correlation measurements confirm stable monoexponential decay and high single-photon purity [g(2)(0) '- 0.01] with no observable blinking. To quantify progress toward the transform limit, we define two figures of merit-the linewidth ratio R = Wexp/Wdec and total broadening OW = Wexp - Wdec-with both being reduced more than fivefold in optimized devices. These results provide a robust framework for developing and evaluating low-noise, tunable WSe2 quantum emitters, potentially realizing electrically controllable sources of indistinguishable single photons for future photonic quantum technologies.
| Original language | English |
|---|---|
| Article number | 040339 |
| Journal | PRX Quantum |
| Volume | 6 |
| Issue number | 4 |
| Number of pages | 14 |
| ISSN | 2691-3399 |
| DOIs | |
| Publication status | Published - 2025 |