Transport mechanisms in low-resistance ohmic contacts to p-InP formed by rapid thermal annealing

Thomas Clausen, Otto Leistiko

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    Abstract

    Thermionic emission across a very small effective Schottky barrier (0-0.2 eV) are reported as being the dominant transport process mechanism in very low-resistance ohmic contacts for conventional AuZn(Ni) metallization systems top-InP formed by rapid thermal annealing. The barrier modulation process is related to interdiffusion and compound formation between the metal elements and the InP. The onset of low specific contact resistance is characterized by a change in the dominant transport mechanism; from predominantly a combination of thermionic emission and field emission to purely thermionic emission.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume62
    Issue number10
    Pages (from-to)1108-1109
    ISSN0003-6951
    DOIs
    Publication statusPublished - 1993

    Bibliographical note

    Copyright (1993) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

    Keywords

    • FIELD-EFFECT TRANSISTORS

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