Transistor Effects and in situ STM of Redox Molecules at Room Temperature.

T. Albrecht, A. Guckian, Jens Ulstrup, J.G. Vos

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Abstract

Inorganic transition metal complexes were identified as potential candidates for transistor-like behaviour in an electrochemical STM configuration at room temperature. The theoretical background has been established based on condensed matter charge transfer theory. It predicts a distinct increase of the tunnelling current close to the equilibrium potential, i.e. if molecular bridge states are tuned into resonance with the Fermi levels of the enclosing electrodes. The complexes display robust electrochemistry on Au(111) electrode surfaces. STM images at molecular resolution give detailed insight into the surface structure. STS experiments are on the way to probe putative transistor-like behaviour.
Original languageEnglish
Title of host publication4th IEEE Conference on Nanotechnology, 2004.
PublisherIEEE
Publication date2004
ISBN (Print)0-7803-8536-5
DOIs
Publication statusPublished - 2004
Event4th IEEE Conference on Nanotechnology - Munich, Germany
Duration: 16 Aug 200419 Aug 2004
Conference number: 4
https://ieeexplore.ieee.org/xpl/conhome/9589/proceeding

Conference

Conference4th IEEE Conference on Nanotechnology
Number4
Country/TerritoryGermany
CityMunich
Period16/08/200419/08/2004
Internet address

Bibliographical note

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