Transistor effects and in situ STM of redox molecules at room temperature

Tim Albrecht, A Guckian, JG Vos, Jens Ulstrup

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Abstract

Inorganic transition metal complexes were identified as potential candidates for transistor-like behavior in an electrochemical scanning tunnelling microscope (STM) configuration at room temperature. The theoretical background has been established based on condensed matter charge transfer theory. It predicts a distinct increase of the tunnelling current close to the equilibrium potential, i.e., if molecular bridge states are tuned into resonance with the Fermi levels of the enclosing electrodes. The complexes display robust electrochemistry on Au(111) electrode surfaces. STM images at molecular resolution reveal detailed information on their surface structure and scanning tunnelling spectroscopy experiments have shown clear evidence of transistor-like behavior
Original languageEnglish
JournalI E E E Transactions on Nanotechnology
Volume4
Issue number4
Pages (from-to)430-434
ISSN1536-125X
DOIs
Publication statusPublished - 2005

Bibliographical note

Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

Keywords

  • transition metal compounds
  • resonant tunneling transistors
  • conductivity
  • molecular electronics

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