Transient measurements with an ultrafast scanning tunneling microscope on semiconductor surfaces

Ulrich Dieter Felix Keil, Jacob Riis Jensen, Jørn Märcher Hvam

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    Abstract

    We demonstrate: the use of an ultrafast scanning tunneling microscope on a semiconductor surface. Laser-induced transient signals with 1.8 ps rise time are detected, The investigated sample is a low-temperature grown GaAs layer plated on a sapphire substrate with a thin gold layer that serves as st bias contact, For comparison, the measurements are performed with the tip in contact to the sample as well as in tunneling above the surface, In contact and under bias, the transient signals are identified as a transient photocurrent, An additional signal is generated by a transient voltage induced by the nonuniform carrier density created by the absorption of the light (photo Dember effect). The transient depends in sign and in shape on the direction of optical excitation. This signal is the dominating transient in tunneling mode. The signals are explained by a capacitive coupling across the tunneling gap, (C) 1998 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume72
    Issue number13
    Pages (from-to)1644-1646
    ISSN0003-6951
    DOIs
    Publication statusPublished - 1998

    Bibliographical note

    Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • TEMPERATURE-GROWN GAAS

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