Transient four-wave mixing in T-shaped GaAs quantum wires

Wolfgang Werner Langbein, Hannes Gislason, Jørn Märcher Hvam

    Research output: Contribution to journalJournal articleResearchpeer-review

    438 Downloads (Pure)

    Abstract

    The binding energy of excitons and biexcitons and the exciton dephasing in T-shaped GaAs quantum wires is investigated by transient four-wave mixing. The T-shaped structure is fabricated by cleaved-edge overgrowth, and its geometry is engineered to optimize the one-dimensional confinement. In this wire of 6.6 x 24 nm(2) size, we find a one-dimensional confinement of more than 20 meV, an inhomogeneous broadening of 3.4 meV, an exciton binding energy of 12 meV, and a biexciton binding energy of 2.0 meV. A dispersion of the homogeneous linewidth within the inhomogeneous broadening due to phonon-assisted relaxation is observed. The exciton acoustic-phonon-scattering coefficient of 6.1 +/- 0.5 mu eV/K is larger than in comparable quantum-well structures.
    Original languageEnglish
    JournalPhysical Review B Condensed Matter
    Volume60
    Issue number24
    Pages (from-to)16667-16674
    ISSN0163-1829
    DOIs
    Publication statusPublished - 1999

    Bibliographical note

    Copyright (1999) by the American Physical Society.

    Keywords

    • BIEXCITONS
    • CLEAVED EDGE OVERGROWTH
    • WELL STRUCTURES
    • PHOTON-ECHO
    • LOCALIZED EXCITONS
    • 2-DIMENSIONAL ELECTRON-GAS
    • LATERAL CONFINEMENT
    • DIMENSIONAL EXCITONS
    • EXCITON BINDING-ENERGY
    • PHASE RELAXATION

    Fingerprint

    Dive into the research topics of 'Transient four-wave mixing in T-shaped GaAs quantum wires'. Together they form a unique fingerprint.

    Cite this