Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ~ 0.53 THz

Nils G. Weimann; Tom Keinicke Johansen; Dimitri Stoppel; Matthias Matalla; Mohamed Brahem; Ksenia Nosaeva; Sebastian Boppel; Nicole Volkmer; Ina Ostermay; Viktor Krozer; Olivier Ostinelli; Colombo R. Bolognesi

doi:10.1109/TED.2018.2854546

Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ~ 0.53 THz

Nils G. Weimann^*
, Tom Keinicke Johansen
, Dimitri Stoppel
, Matthias Matalla
, Mohamed Brahem
, Ksenia Nosaeva
, Sebastian Boppel
, Nicole Volkmer
, Ina Ostermay
, Viktor Krozer
, Olivier Ostinelli
, Colombo R. Bolognesi

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

We report on the realization of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-μm-wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies.

Original language	English
Journal	I E E E Transactions on Electron Devices
Volume	65
Issue number	9
Pages (from-to)	3704 - 3710
ISSN	0018-9383
DOIs	https://doi.org/10.1109/TED.2018.2854546
Publication status	Published - 2018

Keywords

Gallium arsenide antimonide
Heterojunction bipolar transistors
Indium phosphide
Millimeterwave (mm-wave) integrated circuits
Submillimeter-wave (sub-mm-wave) integrated circuits

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10.1109/TED.2018.2854546

HKKR 08413162Accepted author manuscript, 2.43 MB

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Weimann, N. G., Johansen, T. K., Stoppel, D., Matalla, M., Brahem, M., Nosaeva, K., Boppel, S., Volkmer, N., Ostermay, I., Krozer, V., Ostinelli, O., & Bolognesi, C. R. (2018). Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ~ 0.53 THz. I E E E Transactions on Electron Devices, 65(9), 3704 - 3710. https://doi.org/10.1109/TED.2018.2854546

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title = "Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax \textasciitilde{} 0.53 THz",

abstract = "We report on the realization of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-μm-wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies.",

keywords = "Gallium arsenide antimonide, Heterojunction bipolar transistors, Indium phosphide, Millimeterwave (mm-wave) integrated circuits, Submillimeter-wave (sub-mm-wave) integrated circuits",

author = "Weimann, \{Nils G.\} and Johansen, \{Tom Keinicke\} and Dimitri Stoppel and Matthias Matalla and Mohamed Brahem and Ksenia Nosaeva and Sebastian Boppel and Nicole Volkmer and Ina Ostermay and Viktor Krozer and Olivier Ostinelli and Bolognesi, \{Colombo R.\}",

year = "2018",

doi = "10.1109/TED.2018.2854546",

language = "English",

volume = "65",

pages = "3704 -- 3710",

journal = "I E E E Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

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Weimann, NG, Johansen, TK, Stoppel, D, Matalla, M, Brahem, M, Nosaeva, K, Boppel, S, Volkmer, N, Ostermay, I, Krozer, V, Ostinelli, O & Bolognesi, CR 2018, 'Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ~ 0.53 THz', I E E E Transactions on Electron Devices, vol. 65, no. 9, pp. 3704 - 3710. https://doi.org/10.1109/TED.2018.2854546

TY - JOUR

T1 - Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ~ 0.53 THz

AU - Weimann, Nils G.

AU - Johansen, Tom Keinicke

AU - Stoppel, Dimitri

AU - Matalla, Matthias

AU - Brahem, Mohamed

AU - Nosaeva, Ksenia

AU - Boppel, Sebastian

AU - Volkmer, Nicole

AU - Ostermay, Ina

AU - Krozer, Viktor

AU - Ostinelli, Olivier

AU - Bolognesi, Colombo R.

PY - 2018

Y1 - 2018

N2 - We report on the realization of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-μm-wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies.

AB - We report on the realization of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-μm-wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies.

KW - Gallium arsenide antimonide

KW - Heterojunction bipolar transistors

KW - Indium phosphide

KW - Millimeterwave (mm-wave) integrated circuits

KW - Submillimeter-wave (sub-mm-wave) integrated circuits

U2 - 10.1109/TED.2018.2854546

DO - 10.1109/TED.2018.2854546

M3 - Journal article

SN - 0018-9383

VL - 65

SP - 3704

EP - 3710

JO - I E E E Transactions on Electron Devices

JF - I E E E Transactions on Electron Devices

IS - 9

ER -

Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ~ 0.53 THz

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