Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ~ 0.53 THz

Nils G. Weimann*, Tom Keinicke Johansen, Dimitri Stoppel, Matthias Matalla, Mohamed Brahem, Ksenia Nosaeva, Sebastian Boppel, Nicole Volkmer, Ina Ostermay, Viktor Krozer, Olivier Ostinelli, Colombo R. Bolognesi

*Corresponding author for this work

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Abstract

We report on the realization of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-μm-wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies.
Original languageEnglish
JournalI E E E Transactions on Electron Devices
Volume65
Issue number9
Pages (from-to)3704 - 3710
ISSN0018-9383
DOIs
Publication statusPublished - 2018

Keywords

  • Gallium arsenide antimonide
  • Heterojunction bipolar transistors
  • Indium phosphide
  • Millimeterwave (mm-wave) integrated circuits
  • Submillimeter-wave (sub-mm-wave) integrated circuits

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