Abstract
We report on the realization of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-μm-wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies.
Original language | English |
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Journal | I E E E Transactions on Electron Devices |
Volume | 65 |
Issue number | 9 |
Pages (from-to) | 3704 - 3710 |
ISSN | 0018-9383 |
DOIs | |
Publication status | Published - 2018 |
Keywords
- Gallium arsenide antimonide
- Heterojunction bipolar transistors
- Indium phosphide
- Millimeterwave (mm-wave) integrated circuits
- Submillimeter-wave (sub-mm-wave) integrated circuits