Transfer of Heteroepitaxial Grown 3C-SiC Layers for Application in Optical Frequency Combs

M. Kollmuss*, X. Shi, H. Ou, P. J. Wellmann

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingBook chapterResearchpeer-review

58 Downloads (Pure)

Abstract

We developed a process for the fabrication of SiCOI stacks which are a suitable platform for optical devices. Starting from 3C-on-Si samples the silicon substrate was removed by wet chemical etching and the remaining 3C-SiC layers were bonded to two different low refractive substrates (Al2O3 and polycrystalline SiC with a 3 µm thick SiO2 layer on top deposited by PECVD). We found that also bonding onto Al2O3 was possible, the stability of the resulting stack wasn´t strong enough for further processing. In contrast mechanical stable SiCOI stacks could be realized using the oxide coated polycrystalline SiC as substrate. Besides the substrate materials three different bonding approaches (hydrophilic, hydrophobic and adhesive bonding using an HSQ resist) as well as multiple process parameters were analyzed with regard to the bonding performance. The best results could be achieved using the adhesive bonding approach with a bonding temperature ≥ 400°C, a process time ≥ 4 h and a bonding pressure of 96 N/cm2.

Original languageEnglish
Title of host publicationSolid State Phenomena
PublisherTrans Tech Publications Ltd.
Publication date2023
Pages3-8
DOIs
Publication statusPublished - 2023
SeriesSolid State Phenomena
Volume344
ISSN1012-0394

Keywords

  • Bonding
  • Cubic SiC
  • Frequency combs
  • Thin film transfer

Fingerprint

Dive into the research topics of 'Transfer of Heteroepitaxial Grown 3C-SiC Layers for Application in Optical Frequency Combs'. Together they form a unique fingerprint.

Cite this