Abstract
We have used spatially resolved micro Raman spectroscopy to map the full width at half maximum (FWHM) of the graphene G-band and the 2D and G peak positions, for as-grown graphene on copper catalyst layers, for transferred CVD graphene and for micromechanically exfoliated graphene, in order to characterize the effects of a transfer process on graphene properties. Here we use the FWHM(G) as an indicator of the doping level of graphene, and the ratio of the shifts in the 2D and G bands as an indicator of strain. We find that the transfer process introduces an isotropic, spatially uniform, compressive strain in graphene, and increases the carrier concentration.
Original language | English |
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Journal | Microelectronic Engineering |
Volume | 121 |
Pages (from-to) | 113-117 |
Number of pages | 5 |
ISSN | 0167-9317 |
DOIs | |
Publication status | Published - 2014 |
Keywords
- Comparison
- Cu catalysts
- CVD graphene
- Exfoliated graphene
- Graphene transfer
- Raman mapping
- Catalysts
- Full width at half maximum
- Raman spectroscopy
- Cu-catalysts
- Graphene