Transfer induced compressive strain in graphene: Evidence from Raman spectroscopic mapping

Martin Benjamin Barbour Spanget Larsen; David Mackenzie; Jose Caridad; Peter Bøggild; Tim  Booth

doi:10.1016/j.mee.2014.04.038

Transfer induced compressive strain in graphene: Evidence from Raman spectroscopic mapping

Martin Benjamin Barbour Spanget Larsen, David Mackenzie, Jose Caridad, Peter Bøggild, Tim Booth

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Abstract

We have used spatially resolved micro Raman spectroscopy to map the full width at half maximum (FWHM) of the graphene G-band and the 2D and G peak positions, for as-grown graphene on copper catalyst layers, for transferred CVD graphene and for micromechanically exfoliated graphene, in order to characterize the effects of a transfer process on graphene properties. Here we use the FWHM(G) as an indicator of the doping level of graphene, and the ratio of the shifts in the 2D and G bands as an indicator of strain. We find that the transfer process introduces an isotropic, spatially uniform, compressive strain in graphene, and increases the carrier concentration.

Original language	English
Journal	Microelectronic Engineering
Volume	121
Pages (from-to)	113-117
Number of pages	5
ISSN	0167-9317
DOIs	https://doi.org/10.1016/j.mee.2014.04.038
Publication status	Published - 2014

Keywords

Comparison
Cu catalysts
CVD graphene
Exfoliated graphene
Graphene transfer
Raman mapping
Catalysts
Full width at half maximum
Raman spectroscopy
Cu-catalysts
Graphene

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10.1016/j.mee.2014.04.038

Journal MNE2013 2014 02 25 AFTER REVIEW1Accepted author manuscript, 818 KB

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@article{99447330f7c549c1b6b5132952d72242,

title = "Transfer induced compressive strain in graphene: Evidence from Raman spectroscopic mapping",

abstract = "We have used spatially resolved micro Raman spectroscopy to map the full width at half maximum (FWHM) of the graphene G-band and the 2D and G peak positions, for as-grown graphene on copper catalyst layers, for transferred CVD graphene and for micromechanically exfoliated graphene, in order to characterize the effects of a transfer process on graphene properties. Here we use the FWHM(G) as an indicator of the doping level of graphene, and the ratio of the shifts in the 2D and G bands as an indicator of strain. We find that the transfer process introduces an isotropic, spatially uniform, compressive strain in graphene, and increases the carrier concentration. ",

keywords = "Comparison, Cu catalysts, CVD graphene, Exfoliated graphene, Graphene transfer, Raman mapping, Catalysts, Full width at half maximum, Raman spectroscopy, Cu-catalysts, Graphene",

author = "Larsen, {Martin Benjamin Barbour Spanget} and David Mackenzie and Jose Caridad and Peter B{\o}ggild and Tim Booth",

year = "2014",

doi = "10.1016/j.mee.2014.04.038",

language = "English",

volume = "121",

pages = "113--117",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - Transfer induced compressive strain in graphene

T2 - Evidence from Raman spectroscopic mapping

AU - Larsen, Martin Benjamin Barbour Spanget

AU - Mackenzie, David

AU - Caridad, Jose

AU - Bøggild, Peter

AU - Booth, Tim

PY - 2014

Y1 - 2014

N2 - We have used spatially resolved micro Raman spectroscopy to map the full width at half maximum (FWHM) of the graphene G-band and the 2D and G peak positions, for as-grown graphene on copper catalyst layers, for transferred CVD graphene and for micromechanically exfoliated graphene, in order to characterize the effects of a transfer process on graphene properties. Here we use the FWHM(G) as an indicator of the doping level of graphene, and the ratio of the shifts in the 2D and G bands as an indicator of strain. We find that the transfer process introduces an isotropic, spatially uniform, compressive strain in graphene, and increases the carrier concentration.

AB - We have used spatially resolved micro Raman spectroscopy to map the full width at half maximum (FWHM) of the graphene G-band and the 2D and G peak positions, for as-grown graphene on copper catalyst layers, for transferred CVD graphene and for micromechanically exfoliated graphene, in order to characterize the effects of a transfer process on graphene properties. Here we use the FWHM(G) as an indicator of the doping level of graphene, and the ratio of the shifts in the 2D and G bands as an indicator of strain. We find that the transfer process introduces an isotropic, spatially uniform, compressive strain in graphene, and increases the carrier concentration.

KW - Comparison

KW - Cu catalysts

KW - CVD graphene

KW - Exfoliated graphene

KW - Graphene transfer

KW - Raman mapping

KW - Catalysts

KW - Full width at half maximum

KW - Raman spectroscopy

KW - Cu-catalysts

KW - Graphene

U2 - 10.1016/j.mee.2014.04.038

DO - 10.1016/j.mee.2014.04.038

M3 - Journal article

VL - 121

SP - 113

EP - 117

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -

Transfer induced compressive strain in graphene: Evidence from Raman spectroscopic mapping

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Keywords

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