Abstract
We have used spatially resolved micro Raman spectroscopy to map the full width at half maximum (FWHM) of the graphene G-band and the 2D and G peak positions, for as-grown graphene on copper catalyst layers, for transferred CVD graphene and for micromechanically exfoliated graphene, in order to characterize the effects of a transfer process on graphene properties. Here we use the FWHM(G) as an indicator of the doping level of graphene, and the ratio of the shifts in the 2D and G bands as an indicator of strain. We find that the transfer process introduces an isotropic, spatially uniform, compressive strain in graphene, and increases the carrier concentration.
| Original language | English |
|---|---|
| Journal | Microelectronic Engineering |
| Volume | 121 |
| Pages (from-to) | 113-117 |
| Number of pages | 5 |
| ISSN | 0167-9317 |
| DOIs | |
| Publication status | Published - 2014 |
Keywords
- Comparison
- Cu catalysts
- CVD graphene
- Exfoliated graphene
- Graphene transfer
- Raman mapping
- Catalysts
- Full width at half maximum
- Raman spectroscopy
- Cu-catalysts
- Graphene
Cite this
Larsen, M. B. B. S., Mackenzie, D., Caridad, J., Bøggild, P., & Booth, T. (2014). Transfer induced compressive strain in graphene: Evidence from Raman spectroscopic mapping. Microelectronic Engineering, 121, 113-117. https://doi.org/10.1016/j.mee.2014.04.038