Towards solar cells with black silicon texturing passivated by a-Si:H

Beniamino Iandolo; Maksym Plakhotnyuk; Rasmus S. Davidsen; Eugen Stamate; Ole Hansen; Shota  Nunomura

doi:10.1109/PVSC.2018.8547828

Towards solar cells with black silicon texturing passivated by a-Si:H

Beniamino Iandolo, Maksym Plakhotnyuk, Rasmus S. Davidsen, Eugen Stamate, Ole Hansen, Shota Nunomura

Department of Energy Conversion and Storage

National Institute of Advanced Industrial Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

We introduce surfaces of black silicon (bSi) fabricated by reactive ion etch (RIE) and passivated by hydrogenated amorphous silicon (a-Si:H). We demonstrate minority effective lifetime over 1.5 ms for the best bSi surfaces, corresponding to over 700 mV of implied open circuit voltage, values higher than on reference surfaces prepared by KOH etching. Fabrication of solar cells resulted in promising efficiency of 16.1 % for bSi as compared to 18.5 % for KOH references. Quantum efficiency measurements revealed that the bSi cells lose approximately 0.5 mA cm^-2of current density in the visible and of 0.8-1 mA cm^-2 in the infrared (IR) region. Current work is ongoing to further reduce surface damage during RIE to maximize the open circuit voltage and to optimize the deposition of a-Si:H on our bSi in order to reduce the loss in current density.

Original language	English
Title of host publication	Proceedings of the 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC 2018) : (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
Publisher	IEEE
Publication date	2018
Pages	2135-2137
ISBN (Print)	978-1-5386-8529-7
DOIs	https://doi.org/10.1109/PVSC.2018.8547828
Publication status	Published - 2018
Event	7th World Conference on Photovoltaic Energy Conversion - Hilton Waikoloa Village Resort, Waikoloa, United States Duration: 10 Jun 2018 → 15 Jun 2018 Conference number: WCPEC-7

Conference

Conference	7th World Conference on Photovoltaic Energy Conversion
Number	WCPEC-7
Location	Hilton Waikoloa Village Resort
Country/Territory	United States
City	Waikoloa
Period	10/06/2018 → 15/06/2018

Series	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN	0160-8371

Keywords

Silicon heterojunction
a-Si:H
Black silicon

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10.1109/PVSC.2018.8547828

Iandolo 2018 WCPEC7 proceedings aSi on black SiAccepted author manuscript, 461 KB

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Iandolo, B., Plakhotnyuk, M., Davidsen, R. S., Stamate, E., Hansen, O., & Nunomura, S. (2018). Towards solar cells with black silicon texturing passivated by a-Si:H. In Proceedings of the 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC 2018) : (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) (pp. 2135-2137). IEEE. https://doi.org/10.1109/PVSC.2018.8547828

Iandolo, Beniamino ; Plakhotnyuk, Maksym ; Davidsen, Rasmus S. et al. / Towards solar cells with black silicon texturing passivated by a-Si:H. Proceedings of the 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC 2018) : (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) . IEEE, 2018. pp. 2135-2137 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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title = "Towards solar cells with black silicon texturing passivated by a-Si:H",

abstract = "We introduce surfaces of black silicon (bSi) fabricated by reactive ion etch (RIE) and passivated by hydrogenated amorphous silicon (a-Si:H). We demonstrate minority effective lifetime over 1.5 ms for the best bSi surfaces, corresponding to over 700 mV of implied open circuit voltage, values higher than on reference surfaces prepared by KOH etching. Fabrication of solar cells resulted in promising efficiency of 16.1 % for bSi as compared to 18.5 % for KOH references. Quantum efficiency measurements revealed that the bSi cells lose approximately 0.5 mA cm-2 of current density in the visible and of 0.8-1 mA cm-2 in the infrared (IR) region. Current work is ongoing to further reduce surface damage during RIE to maximize the open circuit voltage and to optimize the deposition of a-Si:H on our bSi in order to reduce the loss in current density.",

keywords = "Silicon heterojunction, a-Si:H, Black silicon",

author = "Beniamino Iandolo and Maksym Plakhotnyuk and Davidsen, {Rasmus S.} and Eugen Stamate and Ole Hansen and Shota Nunomura",

year = "2018",

doi = "10.1109/PVSC.2018.8547828",

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booktitle = "Proceedings of the 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC 2018)",

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Iandolo, B, Plakhotnyuk, M, Davidsen, RS, Stamate, E , Hansen, O & Nunomura, S 2018, Towards solar cells with black silicon texturing passivated by a-Si:H. in Proceedings of the 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC 2018) : (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) . IEEE, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2135-2137, 7th World Conference on Photovoltaic Energy Conversion , Waikoloa, Hawaii, United States, 10/06/2018. https://doi.org/10.1109/PVSC.2018.8547828

Towards solar cells with black silicon texturing passivated by a-Si:H. / Iandolo, Beniamino; Plakhotnyuk, Maksym; Davidsen, Rasmus S. et al.
Proceedings of the 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC 2018) : (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) . IEEE, 2018. p. 2135-2137 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Towards solar cells with black silicon texturing passivated by a-Si:H

AU - Iandolo, Beniamino

AU - Plakhotnyuk, Maksym

AU - Davidsen, Rasmus S.

AU - Stamate, Eugen

AU - Hansen, Ole

AU - Nunomura, Shota

N1 - Conference code: WCPEC-7

PY - 2018

Y1 - 2018

N2 - We introduce surfaces of black silicon (bSi) fabricated by reactive ion etch (RIE) and passivated by hydrogenated amorphous silicon (a-Si:H). We demonstrate minority effective lifetime over 1.5 ms for the best bSi surfaces, corresponding to over 700 mV of implied open circuit voltage, values higher than on reference surfaces prepared by KOH etching. Fabrication of solar cells resulted in promising efficiency of 16.1 % for bSi as compared to 18.5 % for KOH references. Quantum efficiency measurements revealed that the bSi cells lose approximately 0.5 mA cm-2 of current density in the visible and of 0.8-1 mA cm-2 in the infrared (IR) region. Current work is ongoing to further reduce surface damage during RIE to maximize the open circuit voltage and to optimize the deposition of a-Si:H on our bSi in order to reduce the loss in current density.

AB - We introduce surfaces of black silicon (bSi) fabricated by reactive ion etch (RIE) and passivated by hydrogenated amorphous silicon (a-Si:H). We demonstrate minority effective lifetime over 1.5 ms for the best bSi surfaces, corresponding to over 700 mV of implied open circuit voltage, values higher than on reference surfaces prepared by KOH etching. Fabrication of solar cells resulted in promising efficiency of 16.1 % for bSi as compared to 18.5 % for KOH references. Quantum efficiency measurements revealed that the bSi cells lose approximately 0.5 mA cm-2 of current density in the visible and of 0.8-1 mA cm-2 in the infrared (IR) region. Current work is ongoing to further reduce surface damage during RIE to maximize the open circuit voltage and to optimize the deposition of a-Si:H on our bSi in order to reduce the loss in current density.

KW - Silicon heterojunction

KW - a-Si:H

KW - Black silicon

U2 - 10.1109/PVSC.2018.8547828

DO - 10.1109/PVSC.2018.8547828

M3 - Article in proceedings

SN - 978-1-5386-8529-7

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 2135

EP - 2137

BT - Proceedings of the 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC 2018)

PB - IEEE

T2 - 7th World Conference on Photovoltaic Energy Conversion

Y2 - 10 June 2018 through 15 June 2018

ER -

Iandolo B, Plakhotnyuk M, Davidsen RS, Stamate E , Hansen O, Nunomura S. Towards solar cells with black silicon texturing passivated by a-Si:H. In Proceedings of the 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC 2018) : (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) . IEEE. 2018. p. 2135-2137. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2018.8547828

Towards solar cells with black silicon texturing passivated by a-Si:H

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Keywords

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