Towards solar cells with black silicon texturing passivated by a-Si:H

Beniamino Iandolo, Maksym Plakhotnyuk, Rasmus S. Davidsen, Eugen Stamate, Ole Hansen, Shota Nunomura

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Abstract

We introduce surfaces of black silicon (bSi) fabricated by reactive ion etch (RIE) and passivated by hydrogenated amorphous silicon (a-Si:H). We demonstrate minority effective lifetime over 1.5 ms for the best bSi surfaces, corresponding to over 700 mV of implied open circuit voltage, values higher than on reference surfaces prepared by KOH etching. Fabrication of solar cells resulted in promising efficiency of 16.1 % for bSi as compared to 18.5 % for KOH references. Quantum efficiency measurements revealed that the bSi cells lose approximately 0.5 mA cm-2 of current density in the visible and of 0.8-1 mA cm-2 in the infrared (IR) region. Current work is ongoing to further reduce surface damage during RIE to maximize the open circuit voltage and to optimize the deposition of a-Si:H on our bSi in order to reduce the loss in current density.
Original languageEnglish
Title of host publicationProceedings of the 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC 2018) : (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
PublisherIEEE
Publication date2018
Pages2135-2137
ISBN (Print)978-1-5386-8529-7
DOIs
Publication statusPublished - 2018
Event7th World Conference on Photovoltaic Energy Conversion - Hilton Waikoloa Village Resort, Waikoloa, United States
Duration: 10 Jun 201815 Jun 2018
Conference number: WCPEC-7

Conference

Conference7th World Conference on Photovoltaic Energy Conversion
NumberWCPEC-7
LocationHilton Waikoloa Village Resort
CountryUnited States
CityWaikoloa
Period10/06/201815/06/2018
SeriesConference Record of the IEEE Photovoltaic Specialists Conference
ISSN0160-8371

Keywords

  • Silicon heterojunction
  • a-Si:H
  • Black silicon

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