Towards quantitative three-dimensional characterisation of InAs quantum dots

Engineering

• Quantum Dot 100%
• Transmissions 58%
• Plan View 23%
• Focused Ion Beam 17%
• Shaped Specimen 17%
• Atom Probe Tomography 17%
• Diffraction Effect 11%
• Tomographic Reconstruction 11%
• Applicability 5%
• Mechanical Grinding 5%
• Manipulator 5%
• Selective Etching 5%
• Specimen Thickness 5%
• Selected Area Electron Diffraction 5%
• Limitations 5%
• Shallower 5%
• Indium Gallium Arsenide 5%
• Atomic Force Microscopy 5%
• Ion Implantation 5%
• Capping Material 5%
• III-V Semiconductor 5%
• Thin Films 5%
• Critical Point 5%

Material Science

• Quantum Dot 100%
• Scanning Transmission Electron Microscopy 41%
• Tomography 35%
• Atom Probe 17%
• Electron Tomography 17%
• Focused Ion Beam 17%
• Transmission Electron Microscopy 17%
• Microscopy 5%
• III-V Semiconductor 5%
• Amorphization 5%
• Wet Etching 5%
• Ion Implantation 5%
• Vapor Phase Epitaxy 5%
• Reactive Ion Etching 5%
• Optical Property 5%
• Indium Gallium Arsenide 5%
• Gallium Ion 5%
• Selected Area Diffraction 5%
• Thin Films 5%

Keyphrases

• Surface Quantum Dots 40%
• Inner Detector 10%
• Critical Point Drying 10%
• Selective Wet Etching 10%
• Capping Material 10%
• Ga Implantation 10%
• Monotonic Function 10%