Towards quantitative three-dimensional characterisation of buried InAs quantum dots

Shima Kadkhodazadeh, Elizaveta Semenova, Martin Schubert, M. Thuvander, K. M. Stiller, Kresten Yvind, Rafal E. Dunin-Borkowski

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    Abstract

    InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe tomography.
    Original languageEnglish
    Book seriesJournal of Physics: Conference Series
    Volume326
    Issue number1
    Pages (from-to)012046
    ISSN1742-6588
    DOIs
    Publication statusPublished - 2011
    Event17th International Conference on Microscopy of Semiconducting Materials - University of Cambridge, Cambridge, United Kingdom
    Duration: 4 Apr 20117 Apr 2011
    Conference number: 17

    Conference

    Conference17th International Conference on Microscopy of Semiconducting Materials
    Number17
    LocationUniversity of Cambridge
    Country/TerritoryUnited Kingdom
    CityCambridge
    Period04/04/201107/04/2011

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