Towards quantitative three-dimensional characterisation of buried InAs quantum dots

Shima Kadkhodazadeh, Elizaveta Semenova, Martin Schubert, M. Thuvander, K. M. Stiller, Kresten Yvind, Rafal E. Dunin-Borkowski

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Abstract

InAs quantum dots grown on InP or InGaAsP are used for optical communication applications operating in the 1.3 – 1.55 μm wavelength range. It is generally understood that the optical properties of such dots are highly dependent on their structural and chemical profiles. However, morphological and compositional measurements of quantum dots using transmission electron microscopy can be ambiguous because the recorded signal is usually a projection through the thickness of the specimen. Here, we discuss the application of scanning transmission electron microscopy tomography to the morphological and chemical characterisation of surface and buried quantum dots. We highlight some of the challenges involved and introduce a new specimen preparation method for creating needle-shaped specimens that each contain multiple dots and are suitable for both scanning transmission electron microscopy tomography and atom probe tomography.
Original languageEnglish
Book seriesJournal of Physics: Conference Series
Volume326
Issue number1
Pages (from-to)012046
ISSN1742-6588
DOIs
Publication statusPublished - 2011
Event17th International Conference on Microscopy of Semiconducting Materials - University of Cambridge, Cambridge, United Kingdom
Duration: 4 Apr 20117 Apr 2011
Conference number: 17

Conference

Conference17th International Conference on Microscopy of Semiconducting Materials
Number17
LocationUniversity of Cambridge
CountryUnited Kingdom
CityCambridge
Period04/04/201107/04/2011

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