Towards quantitative electrostatic potential mapping of working semiconductor devices using off-axis electron holography

Sadegh Yazdi, Takeshi Kasama, Marco Beleggia, Maryam Samaie Yekta, David W. McComb, Alison C. Twitchett-Harrison, Rafal E. Dunin-Borkowski

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    Abstract

    Pronounced improvements in the understanding of semiconductor device performance are expected if electrostatic potential distributions can be measured quantitatively and reliably under working conditions with sufficient sensitivity and spatial resolution. Here, we employ off-axis electron holography to characterize an electrically-biased Si p-. n junction by measuring its electrostatic potential, electric field and charge density distributions under working conditions. A comparison between experimental electron holographic phase images and images obtained using three-dimensional electrostatic potential simulations highlights several remaining challenges to quantitative analysis. Our results illustrate how the determination of reliable potential distributions from phase images of electrically biased devices requires electrostatic fringing fields, surface charges, specimen preparation damage and the effects of limited spatial resolution to be taken into account.
    Original languageEnglish
    JournalULTRAMICROSCOPY
    Volume152
    Pages (from-to)10-20
    ISSN0304-3991
    DOIs
    Publication statusPublished - 2015

    Keywords

    • Doping
    • In-situ biasing
    • Off-axis electron holography
    • Pn junction
    • Doping (additives)
    • Electric fields
    • Electron holography
    • Electrons
    • Electrostatic devices
    • Electrostatics
    • Holography
    • Image resolution
    • Semiconductor doping
    • Semiconductor junctions
    • Specimen preparation
    • Charge density distributions
    • Electrostatic potential distribution
    • Electrostatic potentials
    • P-n junction
    • Potential distributions
    • Semiconductor device performance
    • Spatial resolution
    • Semiconductor devices

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