Towards Carrier Profiling in Nanometer-wide Si Fins with Micro Four-Point Probe

Steven Folkersma*, Janusz Bogdanowicz, Andreas Schulze, Paola Favia, Alexis Franquet, Valentina Spampinato, Dirch Hjorth Petersen, Ole Hansen, Henrik Hartmann Henrichsen, Peter Folmer Nielsen, Lior Shiv, Wilfried Vandervorst

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

In this paper we demonstrate a method based on ion-beam sputtering to extend the use of the micro four-point probe technique towards the determination of the carrier concentration profile in small (nm-scale) devices. We demonstrate the concept on laser-annealed B implanted Si fins and show that the carrier profile is independent of fin width. The measured profile is Gaussian shaped and suggests a 40% dopant activation compared to the B implant profile as calculated with Stopping and Range of Ions in Matter.
Original languageEnglish
Title of host publicationProceedings of the 2018 22nd International Conference on Ion Implantation Technology (IIT)
EditorsHeiner Ryssel , Volker Haublein
Number of pages3
PublisherIEEE
Publication date2018
Pages153-155
ISBN (Print) 978-1-5386-6828-3
ISBN (Electronic)978-1-5386-6829-0
DOIs
Publication statusPublished - 2018

Keywords

  • finFET
  • Carrier profiling
  • Micro four-point probe
  • Secondary ion mass spectroscopy

Fingerprint Dive into the research topics of 'Towards Carrier Profiling in Nanometer-wide Si Fins with Micro Four-Point Probe'. Together they form a unique fingerprint.

Cite this