Towards Carrier Profiling in Nanometer-wide Si Fins with Micro Four-Point Probe

Steven Folkersma*, Janusz Bogdanowicz, Andreas Schulze, Paola Favia, Alexis Franquet, Valentina Spampinato, Dirch Hjorth Petersen, Ole Hansen, Henrik Hartmann Henrichsen, Peter Folmer Nielsen, Lior Shiv, Wilfried Vandervorst

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

In this paper we demonstrate a method based on ion-beam sputtering to extend the use of the micro four-point probe technique towards the determination of the carrier concentration profile in small (nm-scale) devices. We demonstrate the concept on laser-annealed B implanted Si fins and show that the carrier profile is independent of fin width. The measured profile is Gaussian shaped and suggests a 40% dopant activation compared to the B implant profile as calculated with Stopping and Range of Ions in Matter.
Original languageEnglish
Title of host publicationProceedings of the 2018 22nd International Conference on Ion Implantation Technology (IIT)
EditorsHeiner Ryssel , Volker Haublein
Number of pages3
PublisherIEEE
Publication date2018
Pages153-155
ISBN (Print) 978-1-5386-6828-3
ISBN (Electronic)978-1-5386-6829-0
DOIs
Publication statusPublished - 2018

Keywords

  • finFET
  • Carrier profiling
  • Micro four-point probe
  • Secondary ion mass spectroscopy

Cite this

Folkersma, S., Bogdanowicz, J., Schulze, A., Favia, P., Franquet, A., Spampinato, V., ... Vandervorst, W. (2018). Towards Carrier Profiling in Nanometer-wide Si Fins with Micro Four-Point Probe. In H. R., & V. H. (Eds.), Proceedings of the 2018 22nd International Conference on Ion Implantation Technology (IIT) (pp. 153-155). IEEE. https://doi.org/10.1109/IIT.2018.8807934
Folkersma, Steven ; Bogdanowicz, Janusz ; Schulze, Andreas ; Favia, Paola ; Franquet, Alexis ; Spampinato, Valentina ; Petersen, Dirch Hjorth ; Hansen, Ole ; Henrichsen, Henrik Hartmann ; Nielsen, Peter Folmer ; Shiv, Lior ; Vandervorst, Wilfried. / Towards Carrier Profiling in Nanometer-wide Si Fins with Micro Four-Point Probe. Proceedings of the 2018 22nd International Conference on Ion Implantation Technology (IIT). editor / Heiner Ryssel ; Volker Haublein. IEEE, 2018. pp. 153-155
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title = "Towards Carrier Profiling in Nanometer-wide Si Fins with Micro Four-Point Probe",
abstract = "In this paper we demonstrate a method based on ion-beam sputtering to extend the use of the micro four-point probe technique towards the determination of the carrier concentration profile in small (nm-scale) devices. We demonstrate the concept on laser-annealed B implanted Si fins and show that the carrier profile is independent of fin width. The measured profile is Gaussian shaped and suggests a 40{\%} dopant activation compared to the B implant profile as calculated with Stopping and Range of Ions in Matter.",
keywords = "finFET, Carrier profiling, Micro four-point probe, Secondary ion mass spectroscopy",
author = "Steven Folkersma and Janusz Bogdanowicz and Andreas Schulze and Paola Favia and Alexis Franquet and Valentina Spampinato and Petersen, {Dirch Hjorth} and Ole Hansen and Henrichsen, {Henrik Hartmann} and Nielsen, {Peter Folmer} and Lior Shiv and Wilfried Vandervorst",
year = "2018",
doi = "10.1109/IIT.2018.8807934",
language = "English",
isbn = "978-1-5386-6828-3",
pages = "153--155",
editor = "{Heiner Ryssel} and {Volker Haublein}",
booktitle = "Proceedings of the 2018 22nd International Conference on Ion Implantation Technology (IIT)",
publisher = "IEEE",
address = "United States",

}

Folkersma, S, Bogdanowicz, J, Schulze, A, Favia, P, Franquet, A, Spampinato, V, Petersen, DH, Hansen, O, Henrichsen, HH, Nielsen, PF, Shiv, L & Vandervorst, W 2018, Towards Carrier Profiling in Nanometer-wide Si Fins with Micro Four-Point Probe. in HR & VH (eds), Proceedings of the 2018 22nd International Conference on Ion Implantation Technology (IIT). IEEE, pp. 153-155. https://doi.org/10.1109/IIT.2018.8807934

Towards Carrier Profiling in Nanometer-wide Si Fins with Micro Four-Point Probe. / Folkersma, Steven; Bogdanowicz, Janusz; Schulze, Andreas; Favia, Paola; Franquet, Alexis; Spampinato, Valentina; Petersen, Dirch Hjorth; Hansen, Ole; Henrichsen, Henrik Hartmann; Nielsen, Peter Folmer; Shiv, Lior; Vandervorst, Wilfried.

Proceedings of the 2018 22nd International Conference on Ion Implantation Technology (IIT). ed. / Heiner Ryssel; Volker Haublein. IEEE, 2018. p. 153-155.

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

TY - GEN

T1 - Towards Carrier Profiling in Nanometer-wide Si Fins with Micro Four-Point Probe

AU - Folkersma, Steven

AU - Bogdanowicz, Janusz

AU - Schulze, Andreas

AU - Favia, Paola

AU - Franquet, Alexis

AU - Spampinato, Valentina

AU - Petersen, Dirch Hjorth

AU - Hansen, Ole

AU - Henrichsen, Henrik Hartmann

AU - Nielsen, Peter Folmer

AU - Shiv, Lior

AU - Vandervorst, Wilfried

PY - 2018

Y1 - 2018

N2 - In this paper we demonstrate a method based on ion-beam sputtering to extend the use of the micro four-point probe technique towards the determination of the carrier concentration profile in small (nm-scale) devices. We demonstrate the concept on laser-annealed B implanted Si fins and show that the carrier profile is independent of fin width. The measured profile is Gaussian shaped and suggests a 40% dopant activation compared to the B implant profile as calculated with Stopping and Range of Ions in Matter.

AB - In this paper we demonstrate a method based on ion-beam sputtering to extend the use of the micro four-point probe technique towards the determination of the carrier concentration profile in small (nm-scale) devices. We demonstrate the concept on laser-annealed B implanted Si fins and show that the carrier profile is independent of fin width. The measured profile is Gaussian shaped and suggests a 40% dopant activation compared to the B implant profile as calculated with Stopping and Range of Ions in Matter.

KW - finFET

KW - Carrier profiling

KW - Micro four-point probe

KW - Secondary ion mass spectroscopy

U2 - 10.1109/IIT.2018.8807934

DO - 10.1109/IIT.2018.8807934

M3 - Article in proceedings

SN - 978-1-5386-6828-3

SP - 153

EP - 155

BT - Proceedings of the 2018 22nd International Conference on Ion Implantation Technology (IIT)

A2 - , Heiner Ryssel

A2 - , Volker Haublein

PB - IEEE

ER -

Folkersma S, Bogdanowicz J, Schulze A, Favia P, Franquet A, Spampinato V et al. Towards Carrier Profiling in Nanometer-wide Si Fins with Micro Four-Point Probe. In HR, VH, editors, Proceedings of the 2018 22nd International Conference on Ion Implantation Technology (IIT). IEEE. 2018. p. 153-155 https://doi.org/10.1109/IIT.2018.8807934