Abstract
In this paper we demonstrate a method based on ion-beam sputtering to extend the use of the micro four-point probe technique towards the determination of the carrier concentration profile in small (nm-scale) devices. We demonstrate the concept on laser-annealed B implanted Si fins and show that the carrier profile is independent of fin width. The measured profile is Gaussian shaped and suggests a 40% dopant activation compared to the B implant profile as calculated with Stopping and Range of Ions in Matter.
Original language | English |
---|---|
Title of host publication | Proceedings of the 2018 22nd International Conference on Ion Implantation Technology (IIT) |
Editors | Heiner Ryssel , Volker Haublein |
Number of pages | 3 |
Publisher | IEEE |
Publication date | 2018 |
Pages | 153-155 |
ISBN (Print) | 978-1-5386-6828-3 |
ISBN (Electronic) | 978-1-5386-6829-0 |
DOIs | |
Publication status | Published - 2018 |
Keywords
- finFET
- Carrier profiling
- Micro four-point probe
- Secondary ion mass spectroscopy