TO-phonon anisotropies in a highly doped InP (001) grating structure

L. D. Espinosa-Cuellar, L. F. Lastras-Martínez, R. E. Balderas-Navarro*, R. Castro-García, A. Lastras-Martínez, J. M. Flores-Camacho, Mohammad Esmail Aryaee Panah, Elizaveta Semenova, Andrei V. Lavrinenko

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

Abstract

For zinc blende semiconductors, such as InP, the Raman selection rules for a backscattering configuration from the (001) surface forbid the transversal optical (TO) phonon mode, whereas the longitudinal optical mode is allowed. However, when InP is highly doped with Si atoms, InP-Si clusters with the reduced C3v symmetry allow TO modes in the Raman spectrum with the backscattering configuration. Here, we demonstrate that the amplitude of the TO modes can be modulated spatially by using a highly doped InP grating. By exciting the sample with a laser linearly polarized parallel and perpendicular to the grating grooves, we observe a change in amplitude of the phonon optical response for the TO mode.

Original languageEnglish
Article number141102
JournalApplied Physics Letters
Volume119
Issue number14
Number of pages6
ISSN0003-6951
DOIs
Publication statusPublished - 4 Oct 2021

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