Tin-vacancy acceptor levels in electron-irradiated n-type silicon

A. Nylandsted Larsen, J. J. Goubet, P. Mejlholm, J. Sherman Christensen, M. Fanciulli, H. P. Gunnlaugsson, G. Weyer, Jon Wulff Petersen, A. Resende, M. Kaukonen, R. Jones, S. Öberg, P. R. Briddon, B. G. Svensson, J. L. Lindström, S. Dannefaer

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    Abstract

    Si crystals (n-type, fz) with doping levels between 1.5x10(14) and 2x10(16)cm(-3) containing in addition similar to 10(18) Sn/cm(3) were irradiated with 2-MeV electrons to different doses and subsequently studied by deep level transient spectroscopy, Mossbauer spectroscopy, and positron annihilation. Two tin-vacancy (Sn-V) levels at E-c - 0.214 eV and E-c - 0.501 eV have been identified (E-c denotes the conduction band edge). Based on investigations of the temperature dependence of the electron-capture cross sections, the electric-field dependence of the electron emissivity, the anneal temperature, and the defect-introduction rate, it is concluded that these levels are the double and single acceptor levels, respectively, of the Sn-V pair. These conclusions are in agreement with electronic structure calculations carried out using a local spin-density functional theory, incorporating pseudopotentials to eliminate the core electrons, and applied to large H-terminated clusters. Thus, the Sn-V pair in Si has five different charge states corresponding to four levels in the band gap.
    Original languageEnglish
    JournalPhysical Review B Condensed Matter
    Volume62
    Issue number7
    Pages (from-to)4535-4544
    ISSN0163-1829
    DOIs
    Publication statusPublished - 2000

    Bibliographical note

    Copyright (2000) American Physical Society

    Keywords

    • HYDROGEN COMPLEXES
    • PLATINUM
    • POINT-DEFECTS
    • SPECTROSCOPY
    • GENERATION
    • PAIR
    • GOLD
    • DIVACANCIES
    • EPR
    • CRYSTALLINE

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