Abstract
The ultrafast photoconductivity dynamics of black silicon is measured by time-resolved terahertz spectroscopy. Black silicon is produced by laser annealing of an a-Si:H film. We show that the decay time of the photoconductivity depends on the annealing method and fluence used in the production process.
| Original language | English |
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| Title of host publication | Proceedings IRMMW-THz |
| Publication date | 2010 |
| Publication status | Published - 2010 |
| Event | 35th International Conference on Infrared, Millimeter, and Terahertz Waves - Rome, Italy Duration: 5 Sept 2010 → 10 Sept 2010 Conference number: 35 http://www.irmmw-thz2010.org/ |
Conference
| Conference | 35th International Conference on Infrared, Millimeter, and Terahertz Waves |
|---|---|
| Number | 35 |
| Country/Territory | Italy |
| City | Rome |
| Period | 05/09/2010 → 10/09/2010 |
| Internet address |
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