Time-resolved terahertz spectroscopy of black silicon: [invited]

Henrik Porte (Invited author), Dmitry Turchinovich (Invited author), Peter Uhd Jepsen (Invited author), S. Persheyev (Invited author), Yuzhou Fan (Invited author), M. J. Rose (Invited author)

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    The ultrafast photoconductivity dynamics of black silicon is measured by time-resolved terahertz spectroscopy. Black silicon is produced by laser annealing of an a-Si:H film. We show that the decay time of the photoconductivity depends on the annealing method and fluence used in the production process.
    Original languageEnglish
    Title of host publicationProceedings IRMMW-THz
    Publication date2010
    Publication statusPublished - 2010
    Event35th International Conference on Infrared, Millimeter, and Terahertz Waves - Rome, Italy
    Duration: 5 Sept 201010 Sept 2010
    Conference number: 35
    http://www.irmmw-thz2010.org/

    Conference

    Conference35th International Conference on Infrared, Millimeter, and Terahertz Waves
    Number35
    Country/TerritoryItaly
    CityRome
    Period05/09/201010/09/2010
    Internet address

    Fingerprint

    Dive into the research topics of 'Time-resolved terahertz spectroscopy of black silicon: [invited]'. Together they form a unique fingerprint.

    Cite this