Time-resolved terahertz spectroscopy of black silicon: [invited]

Henrik Porte (Invited author), Dmitry Turchinovich (Invited author), Peter Uhd Jepsen (Invited author), S. Persheyev (Invited author), Yuzhou Fan (Invited author), M. J. Rose (Invited author)

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

The ultrafast photoconductivity dynamics of black silicon is measured by time-resolved terahertz spectroscopy. Black silicon is produced by laser annealing of an a-Si:H film. We show that the decay time of the photoconductivity depends on the annealing method and fluence used in the production process.
Original languageEnglish
Title of host publicationProceedings IRMMW-THz
Publication date2010
Publication statusPublished - 2010
Event35th International Conference on Infrared, Millimeter, and Terahertz Waves - Rome, Italy
Duration: 5 Sep 201010 Sep 2010
Conference number: 35
http://www.irmmw-thz2010.org/

Conference

Conference35th International Conference on Infrared, Millimeter, and Terahertz Waves
Number35
CountryItaly
CityRome
Period05/09/201010/09/2010
Internet address

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