Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 mu m

A. Fiore, Paola Borri, Wolfgang Langbein, Jørn Märcher Hvam, U. Oesterle, R. Houdré, R. P. Stanley, M. Ilegems

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Abstract

We present the rime-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 mu m at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10+/-2 ps is measured. indicating a fast capture and relaxation of carriers inside the dots. (C) 2000 American Institute of Physics.
Original languageEnglish
JournalApplied Physics Letters
Volume76
Issue number23
Pages (from-to)3430-3432
ISSN0003-6951
DOIs
Publication statusPublished - 2000

Bibliographical note

Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

  • RELAXATION
  • CAPTURE
  • PHOTOLUMINESCENCE
  • GAAS
  • LASERS
  • ROOM-TEMPERATURE

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