Time-resolved  optical characterization  of InAs/InGaAs quantum dots emitting at 1.3 mu m

A. Fiore; Paola Borri; Wolfgang Langbein; Jørn Märcher Hvam; U. Oesterle; R. Houdré; R. P. Stanley; M. Ilegems

doi:10.1063/1.126668

Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 mu m

A. Fiore, Paola Borri, Wolfgang Langbein, Jørn Märcher Hvam, U. Oesterle, R. Houdré, R. P. Stanley, M. Ilegems

Swiss Federal Institute of Technology Lausanne

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Abstract

We present the rime-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 mu m at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10+/-2 ps is measured. indicating a fast capture and relaxation of carriers inside the dots. (C) 2000 American Institute of Physics.

Original language	English
Journal	Applied Physics Letters
Volume	76
Issue number	23
Pages (from-to)	3430-3432
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.126668
Publication status	Published - 2000

Bibliographical note

Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

RELAXATION
CAPTURE
PHOTOLUMINESCENCE
GAAS
LASERS
ROOM-TEMPERATURE

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10.1063/1.126668

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title = "Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 mu m",

abstract = "We present the rime-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 mu m at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10+/-2 ps is measured. indicating a fast capture and relaxation of carriers inside the dots. (C) 2000 American Institute of Physics.",

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AU - Fiore, A.

AU - Borri, Paola

AU - Langbein, Wolfgang

AU - Hvam, Jørn Märcher

AU - Oesterle, U.

AU - Houdré, R.

AU - Stanley, R. P.

AU - Ilegems, M.

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PY - 2000

Y1 - 2000

N2 - We present the rime-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 mu m at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10+/-2 ps is measured. indicating a fast capture and relaxation of carriers inside the dots. (C) 2000 American Institute of Physics.

AB - We present the rime-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 mu m at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10+/-2 ps is measured. indicating a fast capture and relaxation of carriers inside the dots. (C) 2000 American Institute of Physics.

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KW - PHOTOLUMINESCENCE

KW - GAAS

KW - LASERS

KW - ROOM-TEMPERATURE

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