Time-resolved characterization of InAs/InGaAs quantum dot gain material for 1.3 µm lasers on gallium arsenide

Andrea Fiore, Paola Borri, Wolfgang Langbein, Jørn Märcher Hvam, U. Oesterle, R. Houdré, M. Ilegems

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review


    The time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 ìm is presented. A photoluminescence decay time of 1.8 ns and a fast rise time of 10ps are measured close to room temperature.
    Original languageEnglish
    Title of host publicationCLEO 2000 Technical Digest
    Number of pages348
    Place of PublicationWashington DC
    PublisherOptical Society of America
    Publication date2000
    Publication statusPublished - 2000
    EventConference on Lasers and Electro-Optics 2000 - San Francisco, CA, United States
    Duration: 7 May 200012 May 2000


    ConferenceConference on Lasers and Electro-Optics 2000
    Country/TerritoryUnited States
    CitySan Francisco, CA

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