Time-resolved characterization of InAs/InGaAs quantum dot gain material for 1.3 µm lasers on gallium arsenide

Andrea Fiore, Paola Borri, Wolfgang Langbein, Jørn Märcher Hvam, U. Oesterle, R. Houdré, M. Ilegems

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

The time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 ìm is presented. A photoluminescence decay time of 1.8 ns and a fast rise time of 10ps are measured close to room temperature.
Original languageEnglish
Title of host publicationCLEO 2000 Technical Digest
Number of pages348
Place of PublicationWashington DC
PublisherOptical Society of America
Publication date2000
Publication statusPublished - 2000
EventConference on Lasers and Electro-Optics 2000 - San Francisco, CA, United States
Duration: 7 May 200012 May 2000

Conference

ConferenceConference on Lasers and Electro-Optics 2000
CountryUnited States
CitySan Francisco, CA
Period07/05/200012/05/2000

Cite this

Fiore, A., Borri, P., Langbein, W., Hvam, J. M., Oesterle, U., Houdré, R., & Ilegems, M. (2000). Time-resolved characterization of InAs/InGaAs quantum dot gain material for 1.3 µm lasers on gallium arsenide. In CLEO 2000 Technical Digest Optical Society of America.