Time-resolved characterization of InAs/InGaAs quantum dot gain
                material for 1.3 µm lasers on gallium arsenide

Andrea Fiore; Paola Borri; Wolfgang Langbein; Jørn Märcher Hvam; U. Oesterle; R. Houdré; M. Ilegems

Time-resolved characterization of InAs/InGaAs quantum dot gain material for 1.3 µm lasers on gallium arsenide

Andrea Fiore, Paola Borri, Wolfgang Langbein, Jørn Märcher Hvam, U. Oesterle, R. Houdré, M. Ilegems

Swiss Federal Institute of Technology Lausanne

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

The time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 ìm is presented. A photoluminescence decay time of 1.8 ns and a fast rise time of 10ps are measured close to room temperature.

Original language	English
Title of host publication	CLEO 2000 Technical Digest
Number of pages	348
Place of Publication	Washington DC
Publisher	Optical Society of America
Publication date	2000
Publication status	Published - 2000
Event	Conference on Lasers and Electro-Optics 2000 - San Francisco, CA, United States Duration: 7 May 2000 → 12 May 2000

Conference

Conference	Conference on Lasers and Electro-Optics 2000
Country/Territory	United States
City	San Francisco, CA
Period	07/05/2000 → 12/05/2000

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Cite this

@inproceedings{32226536e1a04c30b8979089e7781098,

title = "Time-resolved characterization of InAs/InGaAs quantum dot gain material for 1.3 µm lasers on gallium arsenide",

abstract = "The time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 {\`i}m is presented. A photoluminescence decay time of 1.8 ns and a fast rise time of 10ps are measured close to room temperature.",

author = "Andrea Fiore and Paola Borri and Wolfgang Langbein and Hvam, {J{\o}rn M{\"a}rcher} and U. Oesterle and R. Houdr{\'e} and M. Ilegems",

year = "2000",

language = "English",

booktitle = "CLEO 2000 Technical Digest",

publisher = "Optical Society of America",

note = "Conference on Lasers and Electro-Optics 2000, CLEO'2000 ; Conference date: 07-05-2000 Through 12-05-2000",

}

Fiore, A, Borri, P, Langbein, W, Hvam, JM, Oesterle, U, Houdré, R & Ilegems, M 2000, Time-resolved characterization of InAs/InGaAs quantum dot gain material for 1.3 µm lasers on gallium arsenide. in CLEO 2000 Technical Digest. Optical Society of America, Washington DC, Conference on Lasers and Electro-Optics 2000, San Francisco, CA, United States, 07/05/2000.

Time-resolved characterization of InAs/InGaAs quantum dot gain material for 1.3 µm lasers on gallium arsenide. / Fiore, Andrea; Borri, Paola; Langbein, Wolfgang et al.
CLEO 2000 Technical Digest. Washington DC: Optical Society of America, 2000.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Time-resolved characterization of InAs/InGaAs quantum dot gain material for 1.3 µm lasers on gallium arsenide

AU - Fiore, Andrea

AU - Borri, Paola

AU - Langbein, Wolfgang

AU - Hvam, Jørn Märcher

AU - Oesterle, U.

AU - Houdré, R.

AU - Ilegems, M.

PY - 2000

Y1 - 2000

N2 - The time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 ìm is presented. A photoluminescence decay time of 1.8 ns and a fast rise time of 10ps are measured close to room temperature.

AB - The time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 ìm is presented. A photoluminescence decay time of 1.8 ns and a fast rise time of 10ps are measured close to room temperature.

M3 - Article in proceedings

BT - CLEO 2000 Technical Digest

PB - Optical Society of America

CY - Washington DC

T2 - Conference on Lasers and Electro-Optics 2000

Y2 - 7 May 2000 through 12 May 2000

ER -