Abstract
We measure THz-induced change in refractive index of ∼5×10−3 in high resistivity silicon at 800 nm which indicates generation of high density of free carriers. The change in refractive index increases by more than 30 times with high initial carrier density set by optical excitation compared to optically unexcited sample showing strong dependence of carrier generation on initial carrier density. The high change in refractive index of silicon shows that THz excitation has a potential to be an alternative mechanism for optical modulation based on carrier induced dispersion for future ultrafast silicon-based modulators.
Original language | English |
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Title of host publication | Proceedings of 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves |
Number of pages | 2 |
Publisher | IEEE |
Publication date | 2016 |
Pages | 1-2 |
ISBN (Print) | 9781467384858 |
DOIs | |
Publication status | Published - 2016 |
Event | 41st International Conference on Infrared, Millimeter and Terahertz Waves - Copenhagen, Denmark Duration: 25 Sept 2016 → 30 Sept 2016 Conference number: 41 |
Conference
Conference | 41st International Conference on Infrared, Millimeter and Terahertz Waves |
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Number | 41 |
Country/Territory | Denmark |
City | Copenhagen |
Period | 25/09/2016 → 30/09/2016 |
Series | International Conference on Infrared, Millimeter and Terahertz Waves |
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ISSN | 2162-2027 |
Keywords
- Silicon
- Optical reflection
- Optical refraction
- Optical variables control
- Optical pulses
- Refractive index
- Optical pumping