THz-induced ultrafast modulation of NIR refractive index of silicon

Abebe Tilahun Tarekegne; Hideki Hirori; Krzysztof Iwaszczuk; Koichiro Tanaka; Peter Uhd Jepsen

doi:10.1109/IRMMW-THz.2016.7758733

THz-induced ultrafast modulation of NIR refractive index of silicon

Abebe Tilahun Tarekegne, Hideki Hirori, Krzysztof Iwaszczuk, Koichiro Tanaka, Peter Uhd Jepsen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

We measure THz-induced change in refractive index of ∼5×10⁻³ in high resistivity silicon at 800 nm which indicates generation of high density of free carriers. The change in refractive index increases by more than 30 times with high initial carrier density set by optical excitation compared to optically unexcited sample showing strong dependence of carrier generation on initial carrier density. The high change in refractive index of silicon shows that THz excitation has a potential to be an alternative mechanism for optical modulation based on carrier induced dispersion for future ultrafast silicon-based modulators.

Original language	English
Title of host publication	Proceedings of 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves
Number of pages	2
Publisher	IEEE
Publication date	2016
Pages	1-2
ISBN (Print)	9781467384858
DOIs	https://doi.org/10.1109/IRMMW-THz.2016.7758733
Publication status	Published - 2016
Event	41st International Conference on Infrared, Millimeter and Terahertz Waves - Copenhagen, Denmark Duration: 25 Sep 2016 → 30 Sep 2016 Conference number: 41

Conference

Conference	41st International Conference on Infrared, Millimeter and Terahertz Waves
Number	41
Country	Denmark
City	Copenhagen
Period	25/09/2016 → 30/09/2016

Series	International Conference on Infrared, Millimeter and Terahertz Waves
ISSN	2162-2027

Keywords

Silicon
Optical reflection
Optical refraction
Optical variables control
Optical pulses
Refractive index
Optical pumping

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10.1109/IRMMW-THz.2016.7758733

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Tarekegne, A. T., Hirori, H., Iwaszczuk, K., Tanaka, K., & Jepsen, P. U. (2016). THz-induced ultrafast modulation of NIR refractive index of silicon. In Proceedings of 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (pp. 1-2). IEEE. International Conference on Infrared, Millimeter and Terahertz Waves https://doi.org/10.1109/IRMMW-THz.2016.7758733

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title = "THz-induced ultrafast modulation of NIR refractive index of silicon",

abstract = "We measure THz-induced change in refractive index of ∼5×10−3 in high resistivity silicon at 800 nm which indicates generation of high density of free carriers. The change in refractive index increases by more than 30 times with high initial carrier density set by optical excitation compared to optically unexcited sample showing strong dependence of carrier generation on initial carrier density. The high change in refractive index of silicon shows that THz excitation has a potential to be an alternative mechanism for optical modulation based on carrier induced dispersion for future ultrafast silicon-based modulators.",

keywords = "Silicon, Optical reflection, Optical refraction, Optical variables control, Optical pulses, Refractive index, Optical pumping",

author = "Tarekegne, {Abebe Tilahun} and Hideki Hirori and Krzysztof Iwaszczuk and Koichiro Tanaka and Jepsen, {Peter Uhd}",

year = "2016",

doi = "10.1109/IRMMW-THz.2016.7758733",

language = "English",

isbn = "9781467384858",

series = " International Conference on Infrared, Millimeter and Terahertz Waves",

pages = "1--2",

booktitle = "Proceedings of 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves",

publisher = "IEEE",

address = "United States",

note = "41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 ; Conference date: 25-09-2016 Through 30-09-2016",

}

Tarekegne, AT, Hirori, H, Iwaszczuk, K, Tanaka, K & Jepsen, PU 2016, THz-induced ultrafast modulation of NIR refractive index of silicon. in Proceedings of 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves. IEEE, International Conference on Infrared, Millimeter and Terahertz Waves, pp. 1-2, 41st International Conference on Infrared, Millimeter and Terahertz Waves, Copenhagen, Denmark, 25/09/2016. https://doi.org/10.1109/IRMMW-THz.2016.7758733

THz-induced ultrafast modulation of NIR refractive index of silicon. / Tarekegne, Abebe Tilahun; Hirori, Hideki; Iwaszczuk, Krzysztof; Tanaka, Koichiro; Jepsen, Peter Uhd.

Proceedings of 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves. IEEE, 2016. p. 1-2 ( International Conference on Infrared, Millimeter and Terahertz Waves).

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - THz-induced ultrafast modulation of NIR refractive index of silicon

AU - Tarekegne, Abebe Tilahun

AU - Hirori, Hideki

AU - Iwaszczuk, Krzysztof

AU - Tanaka, Koichiro

AU - Jepsen, Peter Uhd

N1 - Conference code: 41

PY - 2016

Y1 - 2016

N2 - We measure THz-induced change in refractive index of ∼5×10−3 in high resistivity silicon at 800 nm which indicates generation of high density of free carriers. The change in refractive index increases by more than 30 times with high initial carrier density set by optical excitation compared to optically unexcited sample showing strong dependence of carrier generation on initial carrier density. The high change in refractive index of silicon shows that THz excitation has a potential to be an alternative mechanism for optical modulation based on carrier induced dispersion for future ultrafast silicon-based modulators.

AB - We measure THz-induced change in refractive index of ∼5×10−3 in high resistivity silicon at 800 nm which indicates generation of high density of free carriers. The change in refractive index increases by more than 30 times with high initial carrier density set by optical excitation compared to optically unexcited sample showing strong dependence of carrier generation on initial carrier density. The high change in refractive index of silicon shows that THz excitation has a potential to be an alternative mechanism for optical modulation based on carrier induced dispersion for future ultrafast silicon-based modulators.

KW - Silicon

KW - Optical reflection

KW - Optical refraction

KW - Optical variables control

KW - Optical pulses

KW - Refractive index

KW - Optical pumping

U2 - 10.1109/IRMMW-THz.2016.7758733

DO - 10.1109/IRMMW-THz.2016.7758733

M3 - Article in proceedings

SN - 9781467384858

T3 - International Conference on Infrared, Millimeter and Terahertz Waves

SP - 1

EP - 2

BT - Proceedings of 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves

PB - IEEE

T2 - 41st International Conference on Infrared, Millimeter and Terahertz Waves

Y2 - 25 September 2016 through 30 September 2016

ER -

THz-induced ultrafast modulation of NIR refractive index of silicon

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