THz-induced ultrafast modulation of NIR refractive index of silicon

Abebe Tilahun Tarekegne, Hideki Hirori, Krzysztof Iwaszczuk, Koichiro Tanaka, Peter Uhd Jepsen

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

We measure THz-induced change in refractive index of ∼5×10−3 in high resistivity silicon at 800 nm which indicates generation of high density of free carriers. The change in refractive index increases by more than 30 times with high initial carrier density set by optical excitation compared to optically unexcited sample showing strong dependence of carrier generation on initial carrier density. The high change in refractive index of silicon shows that THz excitation has a potential to be an alternative mechanism for optical modulation based on carrier induced dispersion for future ultrafast silicon-based modulators.
Original languageEnglish
Title of host publicationProceedings of 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves
Number of pages2
PublisherIEEE
Publication date2016
Pages1-2
ISBN (Print)9781467384858
DOIs
Publication statusPublished - 2016
Event41st International Conference on Infrared, Millimeter and Terahertz Waves - Copenhagen, Denmark
Duration: 25 Sep 201630 Sep 2016
Conference number: 41

Conference

Conference41st International Conference on Infrared, Millimeter and Terahertz Waves
Number41
CountryDenmark
CityCopenhagen
Period25/09/201630/09/2016
Series International Conference on Infrared, Millimeter and Terahertz Waves
ISSN2162-2027

Keywords

  • Silicon
  • Optical reflection
  • Optical refraction
  • Optical variables control
  • Optical pulses
  • Refractive index
  • Optical pumping

Fingerprint

Dive into the research topics of 'THz-induced ultrafast modulation of NIR refractive index of silicon'. Together they form a unique fingerprint.

Cite this