A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires were distributed inhomogeneously in the nanowire cross-section, perpendicular to the growth direction. The active dopants showed a remarkable azimuthal distribution along the (111)B flat top of the nanowires, which is attributed to preferred incorporation along 3-fold symmetric truncated facets under the Ga droplet. A diffusion model is presented to explain the unique radial and azimuthal variation of the active dopants in the GaAs nanowires.
- Gallium arsenide
- Molecular beam epitaxy
Dastjerdi, M. H. T., Fiordaliso, E. M., Leshchenko, E. D., Akhtari-Zavareh, A., Kasama, T., Aagesen, M., Dubrovskii, V. G., & LaPierre, R. R. (2017). Three-fold Symmetric Doping Mechanism in GaAs Nanowires. Nano letters, 17(10), 5875-5882. https://doi.org/10.1021/acs.nanolett.7b00794