Three-fold Symmetric Doping Mechanism in GaAs Nanowires

M.H.T. Dastjerdi, Elisabetta Maria Fiordaliso, E.D. Leshchenko, A. Akhtari-Zavareh, Takeshi Kasama, M. Aagesen, V.G. Dubrovskii, R.R. LaPierre

    Research output: Contribution to journalJournal articleResearchpeer-review


    A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires were distributed inhomogeneously in the nanowire cross-section, perpendicular to the growth direction. The active dopants showed a remarkable azimuthal distribution along the (111)B flat top of the nanowires, which is attributed to preferred incorporation along 3-fold symmetric truncated facets under the Ga droplet. A diffusion model is presented to explain the unique radial and azimuthal variation of the active dopants in the GaAs nanowires.
    Original languageEnglish
    JournalNano letters
    Issue number10
    Pages (from-to)5875-5882
    Number of pages8
    Publication statusPublished - 2017


    • GaAs
    • Gallium arsenide
    • Nanowires
    • Self-assisted
    • Molecular beam epitaxy
    • Doping
    • Beryllium

    Cite this

    Dastjerdi, M. H. T., Fiordaliso, E. M., Leshchenko, E. D., Akhtari-Zavareh, A., Kasama, T., Aagesen, M., Dubrovskii, V. G., & LaPierre, R. R. (2017). Three-fold Symmetric Doping Mechanism in GaAs Nanowires. Nano letters, 17(10), 5875-5882.