Three-fold Symmetric Doping Mechanism in GaAs Nanowires

M.H.T. Dastjerdi; Elisabetta Maria Fiordaliso; E.D. Leshchenko; A. Akhtari-Zavareh; Takeshi Kasama; M. Aagesen; V.G. Dubrovskii; R.R. LaPierre

doi:10.1021/acs.nanolett.7b00794

Three-fold Symmetric Doping Mechanism in GaAs Nanowires

M.H.T. Dastjerdi, Elisabetta Maria Fiordaliso, E.D. Leshchenko, A. Akhtari-Zavareh, Takeshi Kasama, M. Aagesen, V.G. Dubrovskii, R.R. LaPierre

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires were distributed inhomogeneously in the nanowire cross-section, perpendicular to the growth direction. The active dopants showed a remarkable azimuthal distribution along the (111)B flat top of the nanowires, which is attributed to preferred incorporation along 3-fold symmetric truncated facets under the Ga droplet. A diffusion model is presented to explain the unique radial and azimuthal variation of the active dopants in the GaAs nanowires.

Original language	English
Journal	Nano Letters
Volume	17
Issue number	10
Pages (from-to)	5875-5882
Number of pages	8
ISSN	1530-6984
DOIs	https://doi.org/10.1021/acs.nanolett.7b00794
Publication status	Published - 2017

Keywords

GaAs
Gallium arsenide
Nanowires
Self-assisted
Molecular beam epitaxy
Doping
Beryllium

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title = "Three-fold Symmetric Doping Mechanism in GaAs Nanowires",

abstract = "A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires were distributed inhomogeneously in the nanowire cross-section, perpendicular to the growth direction. The active dopants showed a remarkable azimuthal distribution along the (111)B flat top of the nanowires, which is attributed to preferred incorporation along 3-fold symmetric truncated facets under the Ga droplet. A diffusion model is presented to explain the unique radial and azimuthal variation of the active dopants in the GaAs nanowires.",

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T1 - Three-fold Symmetric Doping Mechanism in GaAs Nanowires

AU - Dastjerdi, M.H.T.

AU - Fiordaliso, Elisabetta Maria

AU - Leshchenko, E.D.

AU - Akhtari-Zavareh, A.

AU - Kasama, Takeshi

AU - Aagesen, M.

AU - Dubrovskii, V.G.

AU - LaPierre, R.R.

PY - 2017

Y1 - 2017

N2 - A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires were distributed inhomogeneously in the nanowire cross-section, perpendicular to the growth direction. The active dopants showed a remarkable azimuthal distribution along the (111)B flat top of the nanowires, which is attributed to preferred incorporation along 3-fold symmetric truncated facets under the Ga droplet. A diffusion model is presented to explain the unique radial and azimuthal variation of the active dopants in the GaAs nanowires.

AB - A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires were distributed inhomogeneously in the nanowire cross-section, perpendicular to the growth direction. The active dopants showed a remarkable azimuthal distribution along the (111)B flat top of the nanowires, which is attributed to preferred incorporation along 3-fold symmetric truncated facets under the Ga droplet. A diffusion model is presented to explain the unique radial and azimuthal variation of the active dopants in the GaAs nanowires.

KW - GaAs

KW - Gallium arsenide

KW - Nanowires

KW - Self-assisted

KW - Molecular beam epitaxy

KW - Doping

KW - Beryllium

U2 - 10.1021/acs.nanolett.7b00794

DO - 10.1021/acs.nanolett.7b00794

M3 - Journal article

C2 - 28903563

SN - 1530-6984

VL - 17

SP - 5875

EP - 5882

JO - Nano Letters

JF - Nano Letters

IS - 10

ER -

Three-fold Symmetric Doping Mechanism in GaAs Nanowires

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Keywords

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