Abstract
Polycrystalline SnO2-based samples (Sn0.97−x Sb0.03Zn x O2, x = 0, 0.01, 0.03) were prepared by solid-state reactions. The thermoelectric properties of SnO2 doped with Sb and Zn were investigated from 300 K to 1100 K. X-ray diffraction (XRD) analysis revealed all XRD peaks of all the samples as identical to the rutile structure, except for the x = 0.03 sample, which had a small amount of Zn2SbO4 as a secondary phase. We found that the power factor of the x = 0.03 sample was significantly improved due to the simultaneous increase in the electrical conductivity and the Seebeck coefficient. A power factor value of ∼2 × 10−4 W m−1 K−2 was obtained for the x = 0.03 sample at 1060 K, 126% higher than that for the undoped sample.
| Original language | English |
|---|---|
| Journal | Journal of Electronic Materials |
| Volume | 40 |
| Issue number | 5 |
| Pages (from-to) | 674-677 |
| ISSN | 0361-5235 |
| DOIs | |
| Publication status | Published - 2011 |
Keywords
- Magnetic refrigeration
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