Thermally Aided Nonvolatile Memory Using ReS2 Transistors

Natasha Goyal, David M. A. Mackenzie, Himani Jawa, Dirch H. Petersen, Saurabh Lodha

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    Recently two-dimensional (2D) materials have attracted significant research interest for memory applications. Monolayer (MoL) as well as multilayer (ML) MoS2 have been used for demonstrating thermally assisted non-volatile memories (NVM) [5, 6]. With increasing packing density of FETs on a single wafer, high performance ICs can reach an operating temperature closer to 370-530 K range [3] making it important to understand and exploit the behavioural changes in these materials at higher temperatures (HT). Thermally assisted NVM is one such application where locally generated heat is exploited to aid the switching between RESET (RST/STATE 0) and WRITE (WR/STATE 1) states [4]. In this study thermally varying hysteretic gate operation in ML MoS2 and for the first time in ML ReS2 is studied and compared for NVM application. Due to lack of interlayer coupling ReS2 behaves as decoupled MoLs making it a direct band gap material (EG-1.5 eV) for both ML and MoL [2] and hence is of interest for optoelectronic applications in MoL as well as ML form. We demonstrate clockwise (CW) hysteresis at lower temperatures (LT) and anticlockwise (ACW) plus step like conductance crossover (STC) hysteresis at 373 K & 400 K for ML ReS2 and MoS2 respectively. Similar hysteresis behaviour has been previously reported for MoL MoS2 only at a very high operating temperature of 500 K [5]. STC hysteresis provides an edge over CW hysteresis at HT in terms of lower operating voltages (Vp-p), larger RST to WR window defined here as ΔVth/Vp-p (where ΔVth is the hysteresis width) and larger READ (RD) window. These parameters for previous NVM reports are mentioned in Table 1 and compared with this work. ML ReS2 operates at much lower temperatures, lower Vp-p and has larger WR to RST and RD windows as compared to MoS2.
    Original languageEnglish
    Title of host publicationProceedings of 2018 76th Device Research Conference (DRC)
    Number of pages2
    Volume2018-June
    PublisherIEEE
    Publication date2018
    DOIs
    Publication statusPublished - 2018
    Event76th Device Research Conference - University of California, Santa Barbara, Santa Barbara, United States
    Duration: 24 Jun 201827 Jun 2018
    Conference number: 76

    Conference

    Conference76th Device Research Conference
    Number76
    LocationUniversity of California, Santa Barbara
    CountryUnited States
    CitySanta Barbara
    Period24/06/201827/06/2018

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