Abstract
A rate equation theory for quantum-dot-based nanolaser devices is developed. We show that these rate equations are capable of reproducing results of a microscopic semiconductor theory, making them an appropriate starting point for complex device simulations of nanolasers. The input-output characteristics and the modulation response are investigated and the limits of the rate equation approach are discussed.
| Original language | English |
|---|---|
| Journal | Physical Review B-Condensed Matter |
| Volume | 87 |
| Issue number | 20 |
| Pages (from-to) | 205310 |
| Number of pages | 10 |
| ISSN | 0163-1829 |
| DOIs | |
| Publication status | Published - 2013 |
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