Abstract
We use density functional theory to explore the effect on calculations of semiconductor mean inner potentials of the presence of reconstructions, changes in lattice spacing and adsorbates on the surfaces of parallel-sided thin specimens. We also use electron holography to illustrate several factors that affect experimental measurements of mean inner potentials of semiconductor nanowires.
Original language | English |
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Book series | Journal of Physics: Conference Series (Online) |
Volume | 209 |
Issue number | 1 |
Pages (from-to) | 012030 |
ISSN | 1742-6596 |
DOIs | |
Publication status | Published - 2010 |
Event | 16th International Conference on Microscopy of Semiconducting Materials - University of Oxford, Oxford, United Kingdom Duration: 17 Mar 2009 → 20 Mar 2009 Conference number: 16 |
Conference
Conference | 16th International Conference on Microscopy of Semiconducting Materials |
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Number | 16 |
Location | University of Oxford |
Country/Territory | United Kingdom |
City | Oxford |
Period | 17/03/2009 → 20/03/2009 |