Abstract
By employing anisotropic etching techniques and advanced device processing it is possible to micromachine new types of mechanical, electronic, and optical devices of silicon, which have unique properties. In this paper the characteristics of a new type of photovoltaic diode fabricated employing these processing techniques are described. This novel device has not only high efficiency, but also has both contacts placed on the backside of the cell. The first devices which are only 50 mm in diameter are of relatively good quality with low leakage currents (nA), high breakdown voltages (80 V), and low series resistance (mohms). The measured efficiencies at AM 1.5 lie between 12 to 15% with short circuit currents of 25-30 mA/cm2, and open circuit voltages of 0.58-0.6 V
Original language | English |
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Title of host publication | Conference Record of the 24th Photovoltaic Energy Conversion : IEEE Photovoltaic Specialists Conference |
Volume | Volume 2 |
Publisher | IEEE |
Publication date | 1994 |
Pages | 1462-1465 |
ISBN (Print) | 07-80-31460-3 |
DOIs | |
Publication status | Published - 1994 |
Event | 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - Waikoloa, HI, United States Duration: 5 Dec 1994 → 9 Dec 1994 Conference number: 1 http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=3971 |
Conference
Conference | 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion |
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Number | 1 |
Country/Territory | United States |
City | Waikoloa, HI |
Period | 05/12/1994 → 09/12/1994 |
Internet address |