The waffle: a new photovoltaic diode geometry having high efficiency and backside contacts

Otto Leistiko

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    Abstract

    By employing anisotropic etching techniques and advanced device processing it is possible to micromachine new types of mechanical, electronic, and optical devices of silicon, which have unique properties. In this paper the characteristics of a new type of photovoltaic diode fabricated employing these processing techniques are described. This novel device has not only high efficiency, but also has both contacts placed on the backside of the cell. The first devices which are only 50 mm in diameter are of relatively good quality with low leakage currents (nA), high breakdown voltages (80 V), and low series resistance (mohms). The measured efficiencies at AM 1.5 lie between 12 to 15% with short circuit currents of 25-30 mA/cm2, and open circuit voltages of 0.58-0.6 V
    Original languageEnglish
    Title of host publicationConference Record of the 24th Photovoltaic Energy Conversion : IEEE Photovoltaic Specialists Conference
    VolumeVolume 2
    PublisherIEEE
    Publication date1994
    Pages1462-1465
    ISBN (Print)07-80-31460-3
    DOIs
    Publication statusPublished - 1994
    Event1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - Waikoloa, HI, United States
    Duration: 5 Dec 19949 Dec 1994
    Conference number: 1
    http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=3971

    Conference

    Conference1994 IEEE 1st World Conference on Photovoltaic Energy Conversion
    Number1
    Country/TerritoryUnited States
    CityWaikoloa, HI
    Period05/12/199409/12/1994
    Internet address

    Bibliographical note

    Copyright 1994 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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