The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

Saskia Schimmel; Michl Kaiser; Valdas Jokubavicius; Yiyu Ou; Philip Hens; Margareta Linnarsson; Jianwu Sun; Rickard Liljedahl; Haiyan Ou; Mikael Syväjärvi; Peter Wellmann

doi:10.1088/1757-899X/56/1/012002

The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

Saskia Schimmel
, Michl Kaiser
, Valdas Jokubavicius
, Yiyu Ou
, Philip Hens
, Margareta Linnarsson
, Jianwu Sun
, Rickard Liljedahl
, Haiyan Ou
, Mikael Syväjärvi
, Peter Wellmann

Friedrich-Alexander University Erlangen-Nürnberg
Linköping University
KTH Royal Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

Donor-acceptor co-doped SiC is a promising light converter for novel monolithic
all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account dislocation density and distribution. Different doping concentrations and variations in gas phase composition and pressure are investigated.

Original language	English
Title of host publication	EMRS 2013 Spring Meeting, Symposium G
Number of pages	7
Publisher	IOP Publishing
Publication date	2014
Article number	012002
DOIs	https://doi.org/10.1088/1757-899X/56/1/012002
Publication status	Published - 2014
Event	E-MRS 2013 Spring Meeting - Strasbourg, France Duration: 27 May 2013 → 31 May 2013 http://www.emrs-strasbourg.com/index.php?option=com_content&task=view&id=569&Itemid=1583

Conference

Conference	E-MRS 2013 Spring Meeting
Country/Territory	France
City	Strasbourg
Period	27/05/2013 → 31/05/2013
Internet address	http://www.emrs-strasbourg.com/index.php?option=com_content&task=view&id=569&Itemid=1583

Series	I O P Conference Series: Materials Science and Engineering
Number	1
Volume	56
ISSN	1757-8981

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1757 899X 56 1 012002Final published version, 669 KB

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title = "The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy",

abstract = "Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account dislocation density and distribution. Different doping concentrations and variations in gas phase composition and pressure are investigated.",

author = "Saskia Schimmel and Michl Kaiser and Valdas Jokubavicius and Yiyu Ou and Philip Hens and Margareta Linnarsson and Jianwu Sun and Rickard Liljedahl and Haiyan Ou and Mikael Syv{\"a}j{\"a}rvi and Peter Wellmann",

note = "Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.; E-MRS 2013 Spring Meeting ; Conference date: 27-05-2013 Through 31-05-2013",

year = "2014",

doi = "10.1088/1757-899X/56/1/012002",

language = "English",

series = "I O P Conference Series: Materials Science and Engineering",

publisher = "IOP Publishing",

number = "1",

booktitle = "EMRS 2013 Spring Meeting, Symposium G",

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Schimmel, S, Kaiser, M, Jokubavicius, V, Ou, Y, Hens, P, Linnarsson, M, Sun, J, Liljedahl, R, Ou, H, Syväjärvi, M & Wellmann, P 2014, The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy. in EMRS 2013 Spring Meeting, Symposium G., 012002, IOP Publishing, I O P Conference Series: Materials Science and Engineering, no. 1, vol. 56, E-MRS 2013 Spring Meeting, Strasbourg, France, 27/05/2013. https://doi.org/10.1088/1757-899X/56/1/012002

The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy. / Schimmel, Saskia; Kaiser, Michl; Jokubavicius, Valdas et al.
EMRS 2013 Spring Meeting, Symposium G. IOP Publishing, 2014. 012002 (I O P Conference Series: Materials Science and Engineering; No. 1, Vol. 56).

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

AU - Schimmel, Saskia

AU - Kaiser, Michl

AU - Jokubavicius, Valdas

AU - Ou, Yiyu

AU - Hens, Philip

AU - Linnarsson, Margareta

AU - Sun, Jianwu

AU - Liljedahl, Rickard

AU - Ou, Haiyan

AU - Syväjärvi, Mikael

AU - Wellmann, Peter

N1 - Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

PY - 2014

Y1 - 2014

N2 - Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account dislocation density and distribution. Different doping concentrations and variations in gas phase composition and pressure are investigated.

AB - Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account dislocation density and distribution. Different doping concentrations and variations in gas phase composition and pressure are investigated.

U2 - 10.1088/1757-899X/56/1/012002

DO - 10.1088/1757-899X/56/1/012002

M3 - Article in proceedings

T3 - I O P Conference Series: Materials Science and Engineering

BT - EMRS 2013 Spring Meeting, Symposium G

PB - IOP Publishing

T2 - E-MRS 2013 Spring Meeting

Y2 - 27 May 2013 through 31 May 2013

ER -

The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

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