The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

Saskia Schimmel, Michl Kaiser, Valdas Jokubavicius, Yiyu Ou, Philip Hens, Margareta Linnarsson, Jianwu Sun, Rickard Liljedahl, Haiyan Ou, Mikael Syväjärvi, Peter Wellmann

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    Abstract

    Donor-acceptor co-doped SiC is a promising light converter for novel monolithic
    all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account dislocation density and distribution. Different doping concentrations and variations in gas phase composition and pressure are investigated.
    Original languageEnglish
    Title of host publicationEMRS 2013 Spring Meeting, Symposium G
    Number of pages7
    PublisherIOP Publishing
    Publication date2014
    Article number012002
    DOIs
    Publication statusPublished - 2014
    EventE-MRS 2013 Spring Meeting - Strasbourg, France
    Duration: 27 May 201331 May 2013
    http://www.emrs-strasbourg.com/index.php?option=com_content&task=view&id=569&Itemid=1583

    Conference

    ConferenceE-MRS 2013 Spring Meeting
    Country/TerritoryFrance
    CityStrasbourg
    Period27/05/201331/05/2013
    Internet address
    SeriesI O P Conference Series: Materials Science and Engineering
    Number1
    Volume56
    ISSN1757-8981

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