The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

Saskia Schimmel; Michl Kaiser; Valdas Jokubavicius; Yiyu Ou; Philip Hens; Margareta Linnarsson; Jianwu Sun; Rickard Liljedahl; Haiyan Ou; Mikael Syväjärvi; Peter Wellmann

doi:10.1088/1757-899X/56/1/012002

The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

Saskia Schimmel, Michl Kaiser, Valdas Jokubavicius, Yiyu Ou, Philip Hens, Margareta Linnarsson, Jianwu Sun, Rickard Liljedahl, Haiyan Ou, Mikael Syväjärvi, Peter Wellmann

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

Donor-acceptor co-doped SiC is a promising light converter for novel monolithic
all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account dislocation density and distribution. Different doping concentrations and variations in gas phase composition and pressure are investigated.

Original language	English
Title of host publication	EMRS 2013 Spring Meeting, Symposium G
Number of pages	7
Publisher	IOP Publishing
Publication date	2014
Article number	012002
DOIs	https://doi.org/10.1088/1757-899X/56/1/012002
Publication status	Published - 2014
Event	E-MRS 2013 Spring Meeting - Strasbourg, France Duration: 27 May 2013 → 31 May 2013 http://www.emrs-strasbourg.com/index.php?option=com_content&task=view&id=569&Itemid=1583

Conference

Conference	E-MRS 2013 Spring Meeting
Country/Territory	France
City	Strasbourg
Period	27/05/2013 → 31/05/2013
Internet address	http://www.emrs-strasbourg.com/index.php?option=com_content&task=view&id=569&Itemid=1583

Series	I O P Conference Series: Materials Science and Engineering
Number	1
Volume	56
ISSN	1757-8981

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title = "The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy",

abstract = "Donor-acceptor co-doped SiC is a promising light converter for novel monolithicall-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account dislocation density and distribution. Different doping concentrations and variations in gas phase composition and pressure are investigated.",

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note = "Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.; E-MRS 2013 Spring Meeting ; Conference date: 27-05-2013 Through 31-05-2013",

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Schimmel, S, Kaiser, M, Jokubavicius, V, Ou, Y, Hens, P, Linnarsson, M, Sun, J, Liljedahl, R, Ou, H, Syväjärvi, M & Wellmann, P 2014, The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy. in EMRS 2013 Spring Meeting, Symposium G., 012002, IOP Publishing, I O P Conference Series: Materials Science and Engineering, no. 1, vol. 56, E-MRS 2013 Spring Meeting, Strasbourg, France, 27/05/2013. https://doi.org/10.1088/1757-899X/56/1/012002

The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy. / Schimmel, Saskia; Kaiser, Michl; Jokubavicius, Valdas et al.
EMRS 2013 Spring Meeting, Symposium G. IOP Publishing, 2014. 012002 (I O P Conference Series: Materials Science and Engineering; No. 1, Vol. 56).

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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AU - Schimmel, Saskia

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AU - Linnarsson, Margareta

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AU - Syväjärvi, Mikael

AU - Wellmann, Peter

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AB - Donor-acceptor co-doped SiC is a promising light converter for novel monolithicall-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The impact of different types of defects is studied by characterizing fluorescent silicon carbide layers with regard to photoluminescence intensity, homogeneity and efficiency taking into account dislocation density and distribution. Different doping concentrations and variations in gas phase composition and pressure are investigated.

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The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

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