A study of the annealed phases of Ge(111)/Ga for coverages above 0.05 ML is presented. The surfaces are investigated by low-energy electron diffraction, scanning tunneling microscopy, and partly by photoemission and surface X-ray diffraction using synchrotron radiation. For Ga coverages beyond 0.05 ML and up to about 2 ML and annealing temperatures higher than 500 degrees C four different phases appear. They all can be characterized as being discommensurate. Surprisingly, no commensurate superstructure appears on annealed Ge(111)/Ga.