The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field: atomistic origin of planar defect formation

C. R. Das, S. Dhara, H. C. Hsu, L. C. Chen, Y. R. Jeng, A. K. Bhaduri, Baldev Raj, K. H. Chen, S. K. Albert

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Engineering & Materials Science

Chemical Compounds