The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field: atomistic origin of planar defect formation

C. R. Das, S. Dhara, H. C. Hsu, L. C. Chen, Y. R. Jeng, A. K. Bhaduri, Baldev Raj, K. H. Chen, S. K. Albert

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The mechanism of the recrystallization in epitaxial (0001) GaN film, introduced by the indentation technique, is probed by lattice dynamic studies using Raman spectroscopy. The recrystallized region is identified by micro-Raman area mapping. 'Pop-in' bursts in loading lines indicate nucleation of dislocations and climb of dislocations. These processes set in plastic motion of lattice atoms under stress field at the center of indentation for the initiation of the recrystallization process. A planar defect migration mechanism is evolved. A pivotal role of vacancy migration is noted, for the first time, as the rate-limiting factor for the dislocation dynamics initiating the recrystallization process in GaN. Copyright (C) 2009 John Wiley & Sons, Ltd.
Original languageEnglish
JournalJournal of Raman Spectroscopy
Volume40
Issue number12
Pages (from-to)1881-1884
ISSN0377-0486
DOIs
Publication statusPublished - 2009
Externally publishedYes

Keywords

  • Dislocation
  • GaN
  • Indentation
  • Raman spectroscopy
  • Recrystallization

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