The measurement of electrostatic potentials in core/shell GaN nanowires using off-axis electron holography

Sadegh Yazdi, Takeshi Kasama, R Ciechonski, O Kryliouk, Jakob Birkedal Wagner

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    Abstract

    Core-shell GaN nanowires are expected to be building blocks of future light emitting devices. Here we apply off-axis electron holography to map the electrostatic potential distributions in such nanowires. To access the cross-section of selected individual nanowires, focused ion beam (FIB) milling is used. Furthermore, to assess the influence of FIB damage, the dopant potential measured from an intact NW is compared with a FIB prepared one. It is shown that in addition to the built-in potential between the p-type shell and unintentionally n-type under-layer there is a potential barrier between the core and under-layer which are both unintentionally n-type doped.
    Original languageEnglish
    Article number012041
    Book seriesJournal of Physics - Conference Series
    Volume471
    Issue number1
    Number of pages4
    ISSN1742-6588
    DOIs
    Publication statusPublished - 2013
    Event18th Microscopy of Semiconducting Materials Conference - St Catherine's College, Oxford, United Kingdom
    Duration: 7 Apr 201311 Apr 2013
    Conference number: 18

    Conference

    Conference18th Microscopy of Semiconducting Materials Conference
    Number18
    LocationSt Catherine's College
    CountryUnited Kingdom
    CityOxford
    Period07/04/201311/04/2013

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